Sökning: "GaSb"
Visar resultat 1 - 5 av 15 uppsatser innehållade ordet GaSb.
1. In-Situ Investigation of Particle Assisted GaSb Nucleation Using Environmental TEM
Master-uppsats, Lunds universitet/Centrum för analys och syntesSammanfattning : III-V semiconductor material based nanowires have been extensively studied and shown to be a very exciting building block for future electronics. Material systems such as GaSb show a lot of promise in optoelectric and thermoelectric generation applications because of its high electron mobility and small bandgap. LÄS MER
2. In-situ Growth of Sn-seeded GaAs and GaSb Nanowire Heterostructures
Master-uppsats, Lunds universitet/Centrum för analys och syntesSammanfattning : One of the ways to utilize III-V nanowires, is to make use of the possibility to combine materials and create heterostructures which allows for creating material combinations with new properties. A special interest can be taken into Sb-containing nanowires due to the high electron mobility, however there has been reported difficulties with switching to other materials because of a 'memory effect' where Sb lingers in the system and nanowire. LÄS MER
3. Towards a Cooper pair splitter in InAs nanowires with crystal-phase defined quantum dots
Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Lunds Tekniska HögskolaSammanfattning : Cooper pair splitting (CPS) is a process in which the two spin-entangled electrons of a Cooper pair in a superconductor are split into two spatially separated electrons. If the separated electrons are still entangled, CPS can be studied to increase the knowledge of non-locality in quantum systems. LÄS MER
4. Investigations of p-type quantum dots in GaSb nanowires
Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionenSammanfattning : The purpose of this project is to investigate hole transport in p-type quantum dots formed in GaSb nanowire and operating as single hole transistors. The individual and controlled hole-spin confinement in such system yields a variety of proposed applications for spintronics or quantum computation. LÄS MER
5. Spatial control of electron & hole states in InAs/GaSb heterostructures
Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionenSammanfattning : Single nanowire transistors employing three separately controlled electrostatic gates were fabricated to investigate band gap modulation in InAs-GaSb heterostructures. The aim is to show hybridization between electron and hole states over the heterojunction. LÄS MER