Sökning: "III-V-material"

Hittade 5 uppsatser innehållade ordet III-V-material.

  1. 1. The STM Study of Bi Adsorption on the InAs(111)B Surface

    Master-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Författare :Jung-Ching Liu; [2019]
    Nyckelord :bismuth; indium arsenide 111 B; adsorption; surface; scanning tunneling microscopy; Physics and Astronomy;

    Sammanfattning : Semiconductors composed of group III and group V elements have a variety of promising applications, such as topological insulators and quantum computers. Among this category of semiconductors, bismuth (Bi)-containing III-V compounds are able to make these applications possible. LÄS MER

  3. 2. Fabrication and Charaterisation of Finger Gates

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Daniel Svedbrand; [2017]
    Nyckelord :Transistor; MOSFET; NWFET; Nanowire; Finger gate; HSQ; InAs; InGaAs; III-V-material; buffer-layer; CV-characterisation; CV-measurements; Physics and Astronomy; Technology and Engineering;

    Sammanfattning : In this thesis were vertical NWFETs (nanowire field-effect transistors) fabricated, and their electrical properties characterised. The main goal was to minimize the parasitic capacitances that limited the high frequency performance. The nanowires consisted of InAs/InGaAs heterojunctions, and were grown on top of Si via a buffer layer. LÄS MER

  4. 3. Simulation and TLM studies of vertical nanowire devices

    Magister-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Författare :Albin Linder; [2017]
    Nyckelord :III-V; simulations; TLM; vertical; nanowire; devices; NWFET; InAs; InGaAs; Physics and Astronomy;

    Sammanfattning : Vertical nanowire field effect transistors (NWFETs) have in this diploma work been studied in order to examine possible benefits of introducing a highly doped shell around the nanowire channel. It could be concluded that this new device geometry significantly enhances DC performance metrics. LÄS MER

  5. 4. Morphological Studies of Nanowire Surfaces Using Scanning Probe Techniques

    Master-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Författare :Johan Knutsson; [2012]
    Nyckelord :STM; Nanowire; Semiconductor; Morphology; Surface; InAs; Heterostructure; Physics and Astronomy;

    Sammanfattning : Highly structured polytypic InAs III-V semiconductor nanowires with an axial stacking of wurtzite (WZ) and zincblende (ZB) segments were studied using scanning tunneling microscopy and spectroscopy (STM/S). The periodic changes in the axial direction of the crystal structure were achieved by precisely tuning the growth parameters, and no unwanted doping gradient was required. LÄS MER

  7. 5. Characterization of doped GaInP nanowires for photovoltaics

    Magister-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

    Författare :Laura Barrutia; [2011]
    Nyckelord :Physics and Astronomy;

    Sammanfattning : The interest in renewable energy sources has increased recently, which has resulted in increasing research in solar energy as an environmentally friendly way to obtain electricity due to a rising energy consumption and an arising environmental awareness. Direct harvesting of solar energy to electricity is called photovoltaics, where III-V semiconductors nanowires can be used to fabricate multijunction solar cells with promise to deliver high efficiency at low cost. LÄS MER