Sökning: "MOS capacitor"

Visar resultat 1 - 5 av 11 uppsatser innehållade orden MOS capacitor.

  1. 1. Laminated HZO on InAs: A study of as-deposited ferroelectricity

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :André Andersen; [2022]
    Nyckelord :Ferroelectricity; HZO; InAs; III V; As-deposited ferroelectricity; BEOL; Nanoelectronics; Nanoprocessing; Nanotechnology; ALD; MOSCAP; Memory Technology; Technology and Engineering;

    Sammanfattning : As the limits of transistor feature size scaling is reaching its saturation, new innovations are needed to prevent performance loss. High performance transistors on the III/V semiconductor platform implemented with ferroelectric oxides might in the future satisfy this demand. LÄS MER

  3. 2. Fabrication and Characterization of 4H-SiC MOS Capacitors with Different Dielectric Layer Treatments

    Master-uppsats, Linköpings universitet/Halvledarmaterial

    Författare :Otkur Wutikuer; [2018]
    Nyckelord :4H-SiC; MOS capacitor; Dielectric layer; PECVD; C-V measurement; Interface states.;

    Sammanfattning : 4H-SiC based Metal-Oxide Semiconductor(MOS) capacitors are promising key components for next generation power devices. For high frequency power applications, however, there is a major drawback of this type of devices, i.e. LÄS MER

  4. 3. Leakage current and breakdown of HfO2/InGaAs MOS capacitors

    Kandidat-uppsats, Lunds universitet/Fysiska institutionen

    Författare :Edvin Winqvist; [2015]
    Nyckelord :breakdown; leakage; ingaas; hfo2; Physics and Astronomy;

    Sammanfattning : With the constant downscaling of transistors, silicon as a production material is falling out of favour because of increasing power consumption when the size of devices becomes smaller. Compound materials from group III-V in the table of elements are promising candidates to replace silicon. LÄS MER

  5. 4. Current voltage characterization of high-k oxide on InGaAs substrate

    Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

    Författare :Muhammad Ismail; [2014]
    Nyckelord :Physics and Astronomy;

    Sammanfattning : Abstract Metal oxide semiconductor (MOS) capacitor was fabricated on the InGaAs substrate with Al2O3/HfO2 gate oxide. InGaAs is one of the promising candidates for advanced applications which require the lower power supply and high frequency. LÄS MER

  7. 5. Single Crystalline CVD Diamond Based Devices for Power Electronics Applications

    Master-uppsats, Uppsala universitet/Elektricitetslära

    Författare :Ehrnebo Adrian; [2014]
    Nyckelord :;

    Sammanfattning : Chemical vapor deposited single-crystalline diamond has rare material properties such as thermal conductivity five times as high as copper, a wide band gap, a high breakdown field and high carrier mobilities. This makes it a very interesting material for high power, high frequency and high temperature applications. LÄS MER