Sökning: "MOSFET"

Visar resultat 1 - 5 av 59 uppsatser innehållade ordet MOSFET.

  1. 1. AC Gate Bias Stress of 4H-SiC MOSFETs : An investigation into threshold voltage instability of SiC Power MOSFETs under the influence of bipolar gate stress

    Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Författare :Agnimitra Saha; [2023]
    Nyckelord :Silicon Carbide; Gate Bias Stress; Threshold Voltage; On-state Resistance; Temperature; kiselkarbid; gate spännings-stress; tröskelspänning; on-resistansen; temperatur;

    Sammanfattning : Silicon Carbide, a wide band gap (WBG) semiconductor, has pushed electrical limits beyond Silicon (Si) when it comes to power electronics. It has offered the electrification of society showing promise for a greener future. LÄS MER

  3. 2. Thermal Modeling and Simulationwith High Voltage Solid StateRelays for Battery DisconnectionApplications : The potential of replacing mechanical contactors with semiconductors

    Uppsats för yrkesexamina på avancerad nivå, Uppsala universitet/Elektricitetslära

    Författare :David Radisic; Johan Mårtensson; [2023]
    Nyckelord :SSR; SSCB; SiC MOSFET; BEV; Pre-charge; Solid-state relay; Solid-state circuit breaker; Electric vehicles; DC fast-charge; Simulink; BDU;

    Sammanfattning : The swift shift of the automotive industry towards electrification is primarily propelled by technological advancements in battery technology. To stay competitive and meet the new demands of the industry, there is a crucial need for novel ideas and innovation. LÄS MER

  4. 3. Design and Modeling of InxGa(1−x)As/InP based Nanosheet Field Effect Transistors for High Frequency Applications

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Hanyu Liu; Xi Chen; [2023]
    Nyckelord :nanosheet NS ; gate-all-around GAA ; channel release; parasitic channel; MATLAB; COMSOL; technology node; Technology and Engineering;

    Sammanfattning : The advancement of CMOS technology has been fueled by the need to satisfy Moore’s law by shrinking transistors to progressively smaller sizes and increasing the transistor density per unit area [1]. The dimension of the state-of-the-art MOSFET is now down to a few nanometers. LÄS MER

  5. 4. Gate Drive Design for SiC MOSFET Device Characterization : Investigation into the impact of the gate inductance and resistance on the switching behaviour of SiC Power MOSFETs

    Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Författare :Elochukwu Mbah; [2023]
    Nyckelord :Silicon Carbide Power MOSFET; Gate Inductance; Gate Resistance; Miller Period; dv dt and di dt transients; Double Pulse Test; Kiselkarbid Power MOSFET; Gateinduktans; Gate Resistance; Millerperioden; dv dt och di dt transienter; Dubbelpulstest.;

    Sammanfattning : Silicon Carbide as a wide-bandgap semiconductor has several physical and electrical advantages over Silicon for high voltage and high frequency applications. SiC as a MOSFET device has a lot of great characteristics like lower on-resistance and low input capacitances. LÄS MER

  7. 5. Remaining Useful Life Prediction of Power Electronic Devices Using Recurrent Neural Networks

    Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Författare :Congrui Cai; [2023]
    Nyckelord :Power electronics; Prognostics and health management; Remaining useful life; Recurrent neural network; Kraftelektronik; Prognostik och hälsoledning; Återstående livslängd; Återkommande neurala nätverk;

    Sammanfattning : The growing demand for sustainable technology has led to an increased application of power electronics. As these devices are often exposed to harsh conditions, their reliability is a primary concern for both manufacturers and users. LÄS MER