Sökning: "Mattias Åstrand"

Hittade 2 uppsatser innehållade orden Mattias Åstrand.

1. 1. HfO2 and ITO Resistive Random-Access Memory

   Master-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

   Författare :Mattias Åstrand; [2020]
   Nyckelord :RRAM; Resistive switching; HfO2; ITO; Physics and Astronomy;

   Sammanfattning : The purpose of this work is of evaluating the choice of HfO2 and ITO as the dielectric and the top electrode in high performance resistive random-access memory (RRAM), respectively. The study is twofold, as it quantifies performance according to standard figures of merit for this technology, as well as provides insight into the physics of current conduction for this material choice. LÄS MER

3. 2. InAs and high-k oxides, a scanning tunnelling study of their interfaces

   Kandidat-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

   Författare :Mattias Åstrand; [2018]
   Nyckelord :Semiconductor; High-k; Atomic layer deposition; Scanning tunnelling microscopy; Scanning tunnelling spectroscopy; Physics and Astronomy;

   Sammanfattning : In order for semiconductor materials to be suitable for implementation in new and progressive devices they have to be of better electronic characteristics than currently used materials, and maintain these once treated and put into action. It is important to verify that bulk characteristics are not hindered at the surface when a given semiconductor is put in contact with another material due to necessity. LÄS MER