Sökning: "NWFET"

Visar resultat 1 - 5 av 6 uppsatser innehållade ordet NWFET.

  1. 1. Ballistic Modeling of Nanowire MOSFETs

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Lasse Nilsson Södergren; [2017]
    Nyckelord :NWFET; ballistic; nanowire; simulation; MOSFET; Technology and Engineering;

    Sammanfattning : .... LÄS MER

  3. 2. Fabrication and Charaterisation of Finger Gates

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Daniel Svedbrand; [2017]
    Nyckelord :Transistor; MOSFET; NWFET; Nanowire; Finger gate; HSQ; InAs; InGaAs; III-V-material; buffer-layer; CV-characterisation; CV-measurements; Physics and Astronomy; Technology and Engineering;

    Sammanfattning : In this thesis were vertical NWFETs (nanowire field-effect transistors) fabricated, and their electrical properties characterised. The main goal was to minimize the parasitic capacitances that limited the high frequency performance. The nanowires consisted of InAs/InGaAs heterojunctions, and were grown on top of Si via a buffer layer. LÄS MER

  4. 3. Simulation and TLM studies of vertical nanowire devices

    Magister-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Författare :Albin Linder; [2017]
    Nyckelord :III-V; simulations; TLM; vertical; nanowire; devices; NWFET; InAs; InGaAs; Physics and Astronomy;

    Sammanfattning : Vertical nanowire field effect transistors (NWFETs) have in this diploma work been studied in order to examine possible benefits of introducing a highly doped shell around the nanowire channel. It could be concluded that this new device geometry significantly enhances DC performance metrics. LÄS MER

  5. 4. Effect of active load on III-V NWFET Double-Balanced Gilbert Cells

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Pontus Arvidsson; [2016]
    Nyckelord :NWFET; active load ; Current bleeding ; Gilbert Cell ; 60GHz; Mixer; Master’s Thesis ; Cadence.; Technology and Engineering;

    Sammanfattning : Abstract A center point in the transistor research is to find a successor to the silicon-based transistors that are mainly used in today’s industry. III-V Field Effect Transistors (FET) have been the transistor of choice for many researchers for a long time but other options are interesting as well. LÄS MER

  7. 5. Simulations of III-V NWFET Double-Balanced Gilbert Cells with an Improved Noise Model

    Uppsats för yrkesexamina på avancerad nivå, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Niklas Lindblad; [2013]
    Nyckelord :Technology and Engineering;

    Sammanfattning : III-V nanowire transistors might provide a mean for extending Moore’s law, by overcoming the scaling limitations ultimately facing planar silicon CMOS. These high frequency capable transistors with cut-off frequencies in the terahertz regime are suitable for radio communication. LÄS MER