Sökning: "Nanowire transistor"

Visar resultat 1 - 5 av 24 uppsatser innehållade orden Nanowire transistor.

1. 1. Measuring bacterial metabolism and antibioticsusceptibility : using silicon nanowire field-effect transistor.

   Uppsats för yrkesexamina på avancerad nivå, Uppsala universitet/Fasta tillståndets elektronik

   Författare :George Alhoush; [2024]
   Nyckelord :Silicon nanowire field effective transistor; SiNWFET; Ion-selective filed effect transistor; ISFET; Antibiotic susceptibility test; AST; Measuring bacterial metabolism using microchip;

   Sammanfattning : Antimicrobial resistance is considered by many prominent researcher and scientist as a profound global health crisis that us humans must face in the next decade. It is threatening the effectiveness of these once-reliable weapons against bacterial infections and leaving us susceptible to pathogenic agents. LÄS MER

3. 2. Design and Modeling of InxGa(1−x)As/InP based Nanosheet Field Effect Transistors for High Frequency Applications

   Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

   Författare :Hanyu Liu; Xi Chen; [2023]
   Nyckelord :nanosheet NS ; gate-all-around GAA ; channel release; parasitic channel; MATLAB; COMSOL; technology node; Technology and Engineering;

   Sammanfattning : The advancement of CMOS technology has been fueled by the need to satisfy Moore’s law by shrinking transistors to progressively smaller sizes and increasing the transistor density per unit area [1]. The dimension of the state-of-the-art MOSFET is now down to a few nanometers. LÄS MER

4. 3. Temperature Dependent Electrical Characterisation of Vertical InAs-InGaAs Nanowire MOSFETs

   Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

   Författare :Sofie Johannesson; Sebastian Skog; [2022]
   Nyckelord :Vertical InGaAs Nanowire MOSFET Temperature Dependence Noise; Technology and Engineering;

   Sammanfattning : This thesis presents the temperature dependence of InGaAs Nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) grown at two different temperatures. The two different growths represent one sample having nanowires which have a mixed crystal structure (showing stacking faults) and one sample with nanowires of pure crystal structure (without stacking faults). LÄS MER

5. 4. E-Band SPDT RF Switch for a Class F PA in III-V Nanowire MOSFET Technology

   Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

   Författare :Rungeng Xu; [2022]
   Nyckelord :E-band; III-V Nanowire MOSFET; RF Switch; Class-F PA; Technology and Engineering;

   Sammanfattning : This project designs an RF switch operating in E-band to provide a transmit path from a Class-F power amplifier (PA). The basic RF switch is based on the single-pole double-throw (SPDT) topology using shunt transistor switches and two λ/4 transmission line. LÄS MER

7. 5. Investigating the use of Semiconductor Nanowires for Neural Networks

   Master-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

   Författare :Alfredo Serafini; [2022]
   Nyckelord :FDTD method and simulation; optical broadcasting neural network; optical communication of nanowires; sub-wavelength absorption.; Physics and Astronomy;

   Sammanfattning : In this work, we intend to employ nanowires for the realisation of an artificial neuron which can be used to design a neural network that will guide the new generation of non-von Neumann architectures such as Neuromorphic Computing. Possible applications are strongly related to Neuromorphic architectures and artificial intelligence, such as high-performance computers, robotics hardware and autonomous drones. LÄS MER