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1. Fabrication and Characterization of 4H-SiC MOS Capacitors with Different Dielectric Layer Treatments
Master-uppsats, Linköpings universitet/HalvledarmaterialSammanfattning : 4H-SiC based Metal-Oxide Semiconductor(MOS) capacitors are promising key components for next generation power devices. For high frequency power applications, however, there is a major drawback of this type of devices, i.e. LÄS MER
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