Sökning: "gallium"
Visar resultat 1 - 5 av 74 uppsatser innehållade ordet gallium.
1. Radiation Effects on GaN-based HEMTs for RF and Power Electronic Applications
Master-uppsats, KTH/Tillämpad fysikSammanfattning : GaN-HEMTs (Gallium Nitride-based High Electron Mobility Transistors) have, thanks to the large band gap of GaN, electrical properties that are suitable for applications of high electrical voltages, high currents, and fast switching. The large band gap also gives GaN-HEMTs a high resistance to radiation. LÄS MER
2. Analysis of high-voltage low-current DC/DC converters for electrohydrodynamic pumps
Kandidat-uppsats, Uppsala universitet/Institutionen för elektroteknikSammanfattning : Moving parts cause vibrations and tend to wear out. In applications where maintenance is complicated, solutions without moving parts are therefore advantageous. Electrohydrodynamic pumps are such a solution. Instead of mechanical propulsion, they use strong electric fields to induce movement in a dielectric cooling liquid. LÄS MER
3. Sputtered Transparent Contact Layers for Bifacial and Tandem Solar Cells
Uppsats för yrkesexamina på avancerad nivå, Uppsala universitet/SolcellsteknikSammanfattning : A key to solar cells with lower environmental impact is higher efficiency and reduced material usages. Bifacial solar cells may have a higher efficiency as light can enter from two directions and tandem solar cells may use a larger part of the incoming solar spectrum, increasing the efficiency. LÄS MER
4. Cirkulära metallflöden i medicinteknisk utrustning
Kandidat-uppsats, Uppsala universitet/Institutionen för geovetenskaperSammanfattning : I denna studie undersöktes cirkulära metallflöden i medicinteknik på Akademiska sjukhuset i Uppsala och Region Uppsala. Syftet var att kartlägga och undersöka kritiska metaller i utvald medicinteknisk utrustning. Återvinningen av metaller i utrustningen på Akademiska sjukhuset undersöktes. LÄS MER
5. Characterisation of GaN HEMTs on Different Substrates for Power Electronics Applications
Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)Sammanfattning : GaN-based High Electron Mobility Transistors (HEMT) are appealing because of their large breakdown field, high saturation velocity, and superior thermal conductivity. They work at high temperature without much degradation. HEMTs have a few drawbacks despite many positives. The cost of developing GaN HEMTs on a native substrate is high. LÄS MER