Sökning: "temperature rise"
Visar resultat 1 - 5 av 362 uppsatser innehållade orden temperature rise.
1. Case Study: Assessing the Security of a ZigBee Smart HomeNetwork
Kandidat-uppsats, Linnéuniversitetet/Institutionen för datavetenskap och medieteknik (DM)Sammanfattning : Utilizing the ZigBee protocol is pervasive in the context of smart homes, offering substantial convenience to individuals. However, smart home devices commonly handle significant quantities of real-world information, potentially giving rise to concerns related to information leakage. LÄS MER
2. INFLUENCE OF TEMPERATURE ON BIOMASS AND GROWTH RATE OF BENTHIC DIATOMS
Master-uppsats, Göteborgs universitet / Institutionen för biologi och miljövetenskapSammanfattning : Temperature has a significant impact on structure and abundance of microalgal community as well as on physiology (Sheehan et al., 2020). LÄS MER
3. Drivers of sea level variability using neural networks
Master-uppsats, Göteborgs universitet/Institutionen för geovetenskaperSammanfattning : Understanding the forcing of regional sea level variability is crucial as many people all over the world live along the coasts and are endangered by extreme sea levels and the global sea level rise. The adding of fresh water into the oceans due to melting of the Earth’s land ice together with thermosteric changes has led to a rise of the global mean sea level with an accelerating rate during the twentieth century. LÄS MER
4. Primary Drivers of Sea Level Variability in the North – Baltic Sea Transition Using Machine Learning
Master-uppsats, Göteborgs universitet/Institutionen för geovetenskaperSammanfattning : Global mean sea level is rising, however not uniformly. Regional deviations of sea surface height (SSH) are common due to local drivers, including surface winds, ocean density stratifications, vertical land- & crustal movements and more. LÄS MER
5. Off-State Stress Effects in AlGaN/GaN HEMTs : Investigation of high-voltage off-state stress impact on performance of and its retention in hybrid-drain ohmic gate AlGaN/GaN HEMTs
Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)Sammanfattning : High electron mobility transistors (HEMTs) realized using AlxGa1-xN/GaN are relatively new technology which is prominent for high-speed and high-power applications. Some of the main problems with this technology were identified as dynamic RDSon, current collapse and threshold voltage instabilities due to the off-state stress. LÄS MER