Sökning: "Ald"

Visar resultat 1 - 5 av 29 uppsatser innehållade ordet Ald.

  1. 1. The United States and Israel : A study of attitude of the past five United State presidents toward Israel and the Middle East conflict

    Kandidat-uppsats, Linnéuniversitetet/Institutionen för samhällsstudier (SS)

    Författare :Aida Sirmanshahi; [2020]
    Nyckelord :Israel; United States; Palestine; the Middle East; rational choice; peace agreements;

    Sammanfattning : Throughout the past eighty years, the United States and Israel have had a close relationship. This study aims to understand and define patterns of behavior from presidents of the United States in their relation with Israel. LÄS MER

  2. 2. Growth and Characterization of Ferroelectric Lanthanum-Doped Hafnia

    Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Författare :Harald Havir; [2020]
    Nyckelord :Ferroelectricity; Lanthanum-doped Hafnia; ALD; Science General;

    Sammanfattning : Hafnia-based ferroelectrics show great promise as future nonvolatile memory devices, however, their issues regarding device inconsistency across their lifetime, coupled with the relatively short total lifetime, makes these devices only theoretical as of now. In this thesis, an ALD deposition recipe for lanthanum oxide deposition was created. LÄS MER

  3. 3. Development of Ferroelectric Hafnium Oxide for Negative Capacitance Field Effect Transistors

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Robin Atle; [2019]
    Nyckelord :Un-doped ferroelectricity; HfO2; Hafnium oxide; ALD; Atomic Layer Deposition; Hysteresis; P-E; polarization; Technology and Engineering;

    Sammanfattning : With the transistor being the workhorse in modern electronics it has been vastly improved since its invention. However, the previous go-to improvement method of scaling it down has reached a dead end. Power dissipation has become a large concern and is in need of a solution. LÄS MER

  4. 4. Silicon surface passivation via ultra-thin SiO2, TiO2, and Al2O3 layers

    Uppsats för yrkesexamina på avancerad nivå, Luleå tekniska universitet/Institutionen för teknikvetenskap och matematik

    Författare :Anton Ek; [2019]
    Nyckelord :surface passivation; ALD; silicon; solar cell; SiO2; Al2O3; TiO2; stacks; characterization; optimization; RSM; temperature;

    Sammanfattning : Energy traps at the silicon surface originating from discontinuities in the lattice is detrimental to the performance of solar cells. Acting as recombination centers, they offer a location where the charge carriers may easily return to their original energy band after excitation. LÄS MER

  5. 5. Advanced rear contact design for CIGS solar cells

    Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Författare :Jorge Alexandre De Abreu Mafalda; [2019]
    Nyckelord :CIGS; HfO2; surface passivation; alkali treatment; point contact openings; SCAPS;

    Sammanfattning : The current trend concerning the thinning of solar cell devices is mainly motivated by economic aspects, such as the cost of the used rare-earth elements, and by the requirements of emergent technologies. The introduction of ultra-thin absorber layers results in a reduction of used materials and thus contributes to a more cost-effective and time-efficient production process. LÄS MER