Sökning: "Atomic Layer Deposition"

Visar resultat 21 - 25 av 39 uppsatser innehållade orden Atomic Layer Deposition.

1. 21. Ferroelectricity in nanocrystalline Hf0.5Zr0.5O2 thin films

   Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Författare :Lun Sang; [2018]
   Nyckelord :ferroelectricity; Hf0.5Zr0.5O2; GIXRD; XRR; Technology and Engineering; Physics and Astronomy;

   Sammanfattning : Hafnium dioxide (HfO_2) based thin films doped with various dopants (Si, Ge, Al, Gd, Sr, Zr) have been found to exhibit ferroelectricity. These dopants were found to stabilize the III orthorhombic phase in the hafnium oxide based thin films. LÄS MER

3. 22. InAs and high-k oxides, a scanning tunnelling study of their interfaces

   Kandidat-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

   Författare :Mattias Åstrand; [2018]
   Nyckelord :Semiconductor; High-k; Atomic layer deposition; Scanning tunnelling microscopy; Scanning tunnelling spectroscopy; Physics and Astronomy;

   Sammanfattning : In order for semiconductor materials to be suitable for implementation in new and progressive devices they have to be of better electronic characteristics than currently used materials, and maintain these once treated and put into action. It is important to verify that bulk characteristics are not hindered at the surface when a given semiconductor is put in contact with another material due to necessity. LÄS MER

4. 23. Metalization of Micro Fibrillated Cellulose (MFC) films

   Master-uppsats, Karlstads universitet/Institutionen för ingenjörsvetenskap och fysik

   Författare :Yasser Kadhim; [2017]
   Nyckelord :Micro Fibrillated Cellulose MFC films; MFC Metalization; MFC packaging; PVD thin film coating;

   Sammanfattning : In this thesis, two MFC based films Carboxymethylated-Microfibrillated Cellulose (MFC) and Enzymatic-MFC were characterized and metalized in order to improve the barrier properties at high relative humidity. Several methods were used for the characterization process, which were Atomic Force Microscopy (AFM), Contact Angle (CA), Energy Dispersive Spectra (EDS), Light Microscopy (LM), Scanning Electron Microscopy (SEM), and Oxygen Transmission Rate (OTR). LÄS MER

5. 24. Fabrication and electrical characterization of Ge/GeOx/Al2O3/HfO2 MOS capacitors

   Master-uppsats, KTH/Skolan för informations- och kommunikationsteknik (ICT)

   Författare :Laura Zurauskaite; [2016]
   Nyckelord :;

   Sammanfattning : Continuous scaling of complementary metal oxide semiconductor (CMOS) devices has led to constant increase in device performance. However, as scaling becomes more difficult with every technological node, alternative channel materials that could replace silicon (Si) are being investigated [1]. LÄS MER

7. 25. InAs MOS capacitors;Fabrication & Characterization

   Kandidat-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

   Författare :Felix Vennberg; [2016]
   Nyckelord :Physics and Astronomy;

   Sammanfattning : The down scaling of metal-oxide-semiconductor based devices has been halted by the shortcomings of silicon. To enable further miniaturization new materials are required. The proposed replacements include compound III-V semiconductors and high-k oxides, the implementation of which has been difficult. LÄS MER