Sökning: "Chemical etching"

Visar resultat 1 - 5 av 29 uppsatser innehållade orden Chemical etching.

1. 1. Real- and Quasi-Atomic Layer Etching for Ultra-High Resolution Patterning

   Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Författare :Yoana Ilarionova; [2023]
   Nyckelord :Physics and Astronomy;

   Sammanfattning : An attempt was made at developing atomic layer etching from a cyclic etching process in an ICP-RIE tool. During the process OES was used for contamination monitoring and estimation of the relative amount of Cl2 left in the chamber during the etch step of cyclic etching processes. LÄS MER

3. 2. Developing an Ar milling process to improve the contact quality to InAs nanowires

   Kandidat-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

   Författare :Chris Mkolongo; [2023]
   Nyckelord :InAs nanowires; Argon milling; Technology and Engineering;

   Sammanfattning : The aim of this work was to develop a stable and reproducible argon milling process for InAs nanowires to remove the native oxide layer that increases electrical resistance. This was done by identifying a few milling parameters and studying them in relation to the milling rate of silicon dioxide (SiO2). LÄS MER

4. 3. BCP Lithography Defined Arrays of InAs NWs Grown Using MOVPE with Au Seeds

   Master-uppsats, Lunds universitet/Lunds Tekniska Högskola; Lunds universitet/Fasta tillståndets fysik

   Författare :Björn Landeke-Wilsmark; [2022]
   Nyckelord :Physics and Astronomy;

   Sammanfattning : In this report we outline a detailed process flow for a quick and inexpensive implementation of large dense arrays of InAs nanowires (NWs) grown in the reactive ion etching/etched (RIE) pores of a SiO2/SiNx mask on top of an InAs/Si(111) substrate. The self-assembled (hexagonally close-packed) pattern of poly(methyl-methacrylate) (PMMA) cylinders in a poly(styrene) (PS) matrix adopted by a linear diblock poly(styrene-block-methyl-methacrylate) P(S-b-MMA) block-copolymer (BCP) was transferred to the dielectric stack (consisting of a ≈10 nm plasma enhanced chemical vapour deposition/deposited (PECVD) SiNX layer topped by a thin atomic layer deposition/deposited (ALD) SiO2 film) using a two-step RIE procedure. LÄS MER

5. 4. Investigation on the Optimization of GaN Etching for FinFET Applications

   Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

   Författare :Albert Malmros; [2022]
   Nyckelord :Technology and Engineering;

   Sammanfattning : In the framework of this thesis, the optimization of the etching process of GaN for FinFET applications has been investigated. FinFETs are transistors with a vertical architecture in the shape of fins. These fins are fabricated by etching a pattern into a GaN substrate. The etching is carried out in two steps, a dry etch and a wet etch. LÄS MER

7. 5. Design and fabrication of Si diaphragms for capacitive pressure sensors in high-pressure microfluidics

   Uppsats för yrkesexamina på avancerad nivå, Uppsala universitet/Mikrosystemteknik

   Författare :Elin Rosén; [2021]
   Nyckelord :;

   Sammanfattning : The pressure has a major impact when it comes to control of chemical processes. A method for integrating electrical pressure sensors in high-pressure microfluidic chips has, however, so far not been developed and the aim of this project was therefore to study how capacitive pressure sensors could be designed and fabricated to measure pressures between 1-100 bar. LÄS MER