Sökning: "GaN transistor"

Visar resultat 1 - 5 av 10 uppsatser innehållade orden GaN transistor.

1. 1. Off-State Stress Effects in AlGaN/GaN HEMTs : Investigation of high-voltage off-state stress impact on performance of and its retention in hybrid-drain ohmic gate AlGaN/GaN HEMTs

   Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Författare :Ivan Krsic; [2023]
   Nyckelord :HEMT; GaN; off-state stress; memory effects; drain leakage current; dynamic RDSon; threshold voltage instabilities; charge redistribution; HEMT; GaN; stress i avslaget tillstånd; minneseffekter; läckströmmen; dynamisk RDSon; instabiliteten hos styrets tröskelspänning; omfördelningen av laddningar;

   Sammanfattning : High electron mobility transistors (HEMTs) realized using AlxGa1-xN/GaN are relatively new technology which is prominent for high-speed and high-power applications. Some of the main problems with this technology were identified as dynamic RDSon, current collapse and threshold voltage instabilities due to the off-state stress. LÄS MER

3. 2. Radiation Effects on GaN-based HEMTs for RF and Power Electronic Applications

   Master-uppsats, KTH/Tillämpad fysik

   Författare :Wilhelm Holmberg; [2023]
   Nyckelord :High Electron Mobility Transistor; HEMT; Gallium Nitride; GaN; Silicon Carbide; SiC; Proton Radiation; Galliumnitrid; GaN; Kiselkarbid; SiC; Kisel; Si; HEMT; Transistor; Protonstrålning;

   Sammanfattning : GaN-HEMTs (Gallium Nitride-based High Electron Mobility Transistors) have, thanks to the large band gap of GaN, electrical properties that are suitable for applications of high electrical voltages, high currents, and fast switching. The large band gap also gives GaN-HEMTs a high resistance to radiation. LÄS MER

4. 3. Characterisation of GaN HEMTs on Different Substrates for Power Electronics Applications

   Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Författare :Hithiksha Krishna Murthy; [2022]
   Nyckelord :Gallium nitrate; High Mobility Electron Transistor; Silicon carbide; Silicon; Sapphire; substrates; power electronics;

   Sammanfattning : GaN-based High Electron Mobility Transistors (HEMT) are appealing because of their large breakdown field, high saturation velocity, and superior thermal conductivity. They work at high temperature without much degradation. HEMTs have a few drawbacks despite many positives. The cost of developing GaN HEMTs on a native substrate is high. LÄS MER

5. 4. Investigation of Gallium Nitirde High Electron Mobility Transistors

   Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Författare :Shikhar Arvind; [2021]
   Nyckelord :Gallium Nitride; High electron mobility transistor; leakage current; in-situ Silicon Nitride; power electronics;

   Sammanfattning : Gallium Nitride (GaN) based transistors have been in the spotlight for power electronics due to promising properties like high bandgap, high breakdown field, high electron mobility, and high-frequency applications. While there are some commercial devices based on these transistors available, there is still room for improvement in these devices for widespread usage. LÄS MER

7. 5. Characterization of GaNbased HEMTs for power electronics

   Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Författare :Xiaomin Liang; [2020]
   Nyckelord :Gallium nitride; high electron mobility transistor; gate designs; power electronics;

   Sammanfattning : Gallium nitride (GaN) based high electron mobility transistors (HEMTs) are promising for power electronic applications due to their high breakdown voltage and power efficiency compared to Si-based power devices. As known, the design of the HEMT has high impact on the performance of the devices. LÄS MER