Sökning: "Hafnium oxide"

Visar resultat 1 - 5 av 11 uppsatser innehållade orden Hafnium oxide.

  1. 1. Structural analysis of HZO thin film and electrode using X-ray diffraction

    Kandidat-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Författare :Elliot Winsnes; [2024]
    Nyckelord :HZO; hafnia; hafnium dioxide; zirconium dioxide; ferroelectricity; ferroelectric; synchrotron radiation; X-ray diffraction; Physics and Astronomy;

    Sammanfattning : Since its discovery in 2011, the ferroelectricity of thin films based on HfO2 has been studied intensively. In particular, thin films with a 1:1 ratio of HfO2 and ZrO2 (HZO) has been of great interest. The ferroelectricity arises from a non-centrosymmetric orthorhombic (o) phase of HZO whose prevalence is dependent on the processing conditions. LÄS MER

  3. 2. Laminated HZO on InAs: A study of as-deposited ferroelectricity

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :André Andersen; [2022]
    Nyckelord :Ferroelectricity; HZO; InAs; III V; As-deposited ferroelectricity; BEOL; Nanoelectronics; Nanoprocessing; Nanotechnology; ALD; MOSCAP; Memory Technology; Technology and Engineering;

    Sammanfattning : As the limits of transistor feature size scaling is reaching its saturation, new innovations are needed to prevent performance loss. High performance transistors on the III/V semiconductor platform implemented with ferroelectric oxides might in the future satisfy this demand. LÄS MER

  4. 3. Analysis of condition for ALD deposition of ferroelectric HZO

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Teodor Qvint; [2022]
    Nyckelord :HZO; Ferro; ALD; Temperature; Purge time; Technology and Engineering;

    Sammanfattning : Deposition of ferroelectric hafnium zirconium oxide (HZO) on semiconductor samples with Atomic Layer Deposition (ALD) has proven to be a viable method of production. But while the physical processes of ALD deposition is relatively well know, there exists some gaps in knowledge about different parameters for the ALD and the resulting depositions. LÄS MER

  5. 4. Investigating and Fabricating High-K (Al2O3) and Ferroelectric (HfO2) MIM-Capacitors for use in BEOL Fabrication Applications

    Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Författare :Thomas Hackett; [2021]
    Nyckelord :atomic layer deposition ALD ; ferroelectric; metal-insulator-metal MIM capacitors; low thermal budget; rapid thermal annealing RTA ;

    Sammanfattning : Integration of high-K Metal-Insulator-Metal (MIM) capacitors in the Back-end-of-line (BEOL) is a topic of interest for the further development of the process at KTH Royal Institute of Technology. MIM-capacitors benefit from having constant capacitance values over a range of voltages and/or frequencies. LÄS MER

  7. 5. HfO2 and ITO Resistive Random-Access Memory

    Master-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Författare :Mattias Åstrand; [2020]
    Nyckelord :RRAM; Resistive switching; HfO2; ITO; Physics and Astronomy;

    Sammanfattning : The purpose of this work is of evaluating the choice of HfO2 and ITO as the dielectric and the top electrode in high performance resistive random-access memory (RRAM), respectively. The study is twofold, as it quantifies performance according to standard figures of merit for this technology, as well as provides insight into the physics of current conduction for this material choice. LÄS MER