Sökning: "Heterostructure"

Visar resultat 16 - 20 av 24 uppsatser innehållade ordet Heterostructure.

1. 16. Vertical heterostructure III-V nanowire MOSFETs

   Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

   Författare :Adam Jönsson; [2016]
   Nyckelord :MOSFET; transistor; heterostructure; III-V; RF; semiconductor; silicon; fabrication; electronics; Technology and Engineering;

   Sammanfattning : If cars had developed as fast as processors they would go at 470,000 mph, get 100,000 miles to the gallon, and cost 3 cents" claims Paul Ottelini, Intel CEO 2005-2013. This serves as a reminder of how fast the field of nanoelectronics is developing due to constant demand for faster and more energy efficient integrated circuits. LÄS MER

3. 17. Properties of III-V semiconductor materials grown by HVPE

   Master-uppsats, KTH/Skolan för informations- och kommunikationsteknik (ICT)

   Författare :Stamoulis Stergiakis; [2016]
   Nyckelord :;

   Sammanfattning : This thesis focuses on the characterization of lll-V semiconductor materials by using Scanning Electron Microscopy equipped with Energy Dispersive Spectroscopy (SEM-EDS), High Resolution X-ray Diffraction (HRXRD), Atomic Force Microscopy (AFM) and Photoluminescence (PL). In XRD characterization, the rocking curve measurement was conducted to evaluate the composition of III-V semiconductor alloys and the Reciprocal Lattice Mapping (RLM) revealed the detailed structural properties of heteroepitaxial III-V semiconductors. LÄS MER

4. 18. High resolution imaging of GaAs nanowires

   Kandidat-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Synkrotronljusfysik

   Författare :Andreas Johansson; [2015]
   Nyckelord :Scanning Tunneling Microscopy; STM; Nanowire; Gallium Arsenide; GaAs; Semiconductor; Atomic structure; Morphology; Nanoelectronics; Heterostructure; Physics and Astronomy;

   Sammanfattning : Semiconductor nanowires (NWs) are expected to be the new building blocks in electronics and photonics, but improved understanding of the nanowire surfaces and electronic properties are required to realize it. In this bachelor thesis, wurtzite (Wz)-zincblende (Zb) axial heterostructure GaAs nanowires are studied using scanning tunneling microscopy and spectroscopy. LÄS MER

5. 19. Study of the Optical Properties of sp2-Hybridized Boron Nitride

   Master-uppsats, Linköpings universitet/Tillämpad optik

   Författare :Eduardo Antunez de Mayolo; [2014]
   Nyckelord :Spectroscopic ellipsometry; boron nitride; optical properties; materials characterization; III-V nitride semiconductors; cathodoluminescence; electron microscopy; Raman spectroscopy;

   Sammanfattning : Nitride-based semiconductor materials make it possible to fabricate optoelectronic devices that operate in the whole electromagnetic range, since the band gaps of these compounds can be modified by doping. Among these materials, the sp2-hybridized boron nitride has properties that make it a potential candidate for integration in devices operating in the short-wavelength limit, under harsh environment conditions, due to the strength of the B-N bond. LÄS MER

7. 20. Morphological Studies of Nanowire Surfaces Using Scanning Probe Techniques

   Master-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

   Författare :Johan Knutsson; [2012]
   Nyckelord :STM; Nanowire; Semiconductor; Morphology; Surface; InAs; Heterostructure; Physics and Astronomy;

   Sammanfattning : Highly structured polytypic InAs III-V semiconductor nanowires with an axial stacking of wurtzite (WZ) and zincblende (ZB) segments were studied using scanning tunneling microscopy and spectroscopy (STM/S). The periodic changes in the axial direction of the crystal structure were achieved by precisely tuning the growth parameters, and no unwanted doping gradient was required. LÄS MER