Sökning: "Hf0.5Zr0.5O2"

Hittade 2 uppsatser innehållade ordet Hf0.5Zr0.5O2.

1. 1. Ferroelectric Gate-Stack on InAs

   Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Författare :Pontus Littow; [2019]
   Nyckelord :Physics and Astronomy;

   Sammanfattning : Modern electronics are becoming more powerful and energy efficient for every new process generation. A key component in electronics is the transistor, which has made this trend possible. For many years the transistor has simply been scaled down.However, that is not possible any longer. LÄS MER

3. 2. Ferroelectricity in nanocrystalline Hf0.5Zr0.5O2 thin films

   Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Författare :Lun Sang; [2018]
   Nyckelord :ferroelectricity; Hf0.5Zr0.5O2; GIXRD; XRR; Technology and Engineering; Physics and Astronomy;

   Sammanfattning : Hafnium dioxide (HfO_2) based thin films doped with various dopants (Si, Ge, Al, Gd, Sr, Zr) have been found to exhibit ferroelectricity. These dopants were found to stabilize the III orthorhombic phase in the hafnium oxide based thin films. LÄS MER