Sökning: "High Electron Mobility Transistor"

Visar resultat 1 - 5 av 6 uppsatser innehållade orden High Electron Mobility Transistor.

  1. 1. Characterization of GaNbased HEMTs for power electronics

    Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Författare :Xiaomin Liang; [2020]
    Nyckelord :Gallium nitride; high electron mobility transistor; gate designs; power electronics;

    Sammanfattning : Gallium nitride (GaN) based high electron mobility transistors (HEMTs) are promising for power electronic applications due to their high breakdown voltage and power efficiency compared to Si-based power devices. As known, the design of the HEMT has high impact on the performance of the devices. LÄS MER

  2. 2. Low-Frequency Noise in InGaAs Nanowire MOSFETs

    Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Författare :Christian Mario Möhle; [2017]
    Nyckelord :Physics and Astronomy;

    Sammanfattning : Low-frequency (LF) noise (1/f as well as random telegraph-signal (RTS) noise) measurements were performed on high-performance InGaAs nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs). 1/f noise measurements at room temperature (RT) show that the dominant noise mechanism is carrier number fluctuations. LÄS MER

  3. 3. Design of a Low-Noise Amplifier for Radar Application in the 5 GHz Frequency Band

    Master-uppsats, Högskolan i Gävle/Elektronik

    Författare :Javier Alvaro Rivera Suaña; [2017]
    Nyckelord :;

    Sammanfattning : The purpose of this project was to design and manufacture a Low-Noise Amplifier (LNA) working at a 5 GHz frequency band, by using High Electron Mobility Transistor (HEMT) from Avago Technologies. To improve our design, it was necessary to build a two-stage amplifier; one stage to work in minimum noise sensitivity, and another stage to get the maximum gain achievable by the transistor. LÄS MER

  4. 4. Hall Measurement on Regrown Nanowires

    Master-uppsats, Lunds universitet/Fysiska institutionen

    Författare :Sudhakar Sivakumar; [2015]
    Nyckelord :Hall measurement; InGaAs; III-V semiconductor; ballistic; transport properties; mobility; sheet carrier concentration; Physics and Astronomy;

    Sammanfattning : Ternary semiconductor alloys like $In_xGa_{1-x}As$ have lured competing attention in connection to sub-50 nm high performance, low power, planar Complementary Metal Oxide Semiconductor technology. This compound semiconductor owes its popularity to excellent bulk carrier mobility, minority carrier diffusion constant, small bandgap, high electron injection velocity and its capability to take Moore's law beyond silicon platform. LÄS MER

  5. 5. Fabrication, Characterization and Simulation of Graphene Field Effect Transistors operating at Microwave Frequencies

    Master-uppsats, KTH/Skolan för informations- och kommunikationsteknik (ICT)

    Författare :Pandey Himadri; [2013]
    Nyckelord :Graphene field effect transistor; microwave frequencies; transit frequency;

    Sammanfattning : With the end of Si based Metal Oxide Semiconductor Field Effect Transistor scaling paradigm approaching fast as predicted by the Moore’s Law, and the technological advancements as well as human needs in many ways pushing for faster devices, graphene has emerged as a powerful alternative solution. This is so because of its very special properties like high charge carrier mobility, highly linear dispersion relation, high current carrying capacity and so on. LÄS MER