Sökning: "High Electron Mobility Transistor"

Visar resultat 6 - 10 av 13 uppsatser innehållade orden High Electron Mobility Transistor.

1. 6. Niobium Ohmic Contacts for Cryogenic Indium Phosphide High-Electron-Mobility Transistors

   Master-uppsats, KTH/Tillämpad fysik

   Författare :Linnéa Bendrot; [2022]
   Nyckelord :Ohmic contacts; high-electron-mobility transistor; InP; Nb films; cryogenic electronics; low-noise amplifier; quantum computing; transfer length method; superconductivity; contact barrier resistance; Ohmska kontakter; högelektronmobilitetstransistorer; indiumfosfid; niob; tunnfilm; kryogen elektronik; lågbrusförstärkare; kvantdatorer; Transfer Length-metod; supraledning; kontakt- barriärresistans;

   Sammanfattning : Ohmic contacts are crucial components in semiconductor devices such as transistors and diodes, and lowering their contact resistance is an important factor in device performance enhancement. This is especially important for low-noise amplifiers (LNAs) where device noise temperature decreases both directly and indirectly with decreasing contact resistance. LÄS MER

3. 7. Investigation of Gallium Nitirde High Electron Mobility Transistors

   Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Författare :Shikhar Arvind; [2021]
   Nyckelord :Gallium Nitride; High electron mobility transistor; leakage current; in-situ Silicon Nitride; power electronics;

   Sammanfattning : Gallium Nitride (GaN) based transistors have been in the spotlight for power electronics due to promising properties like high bandgap, high breakdown field, high electron mobility, and high-frequency applications. While there are some commercial devices based on these transistors available, there is still room for improvement in these devices for widespread usage. LÄS MER

4. 8. Characterization of GaNbased HEMTs for power electronics

   Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Författare :Xiaomin Liang; [2020]
   Nyckelord :Gallium nitride; high electron mobility transistor; gate designs; power electronics;

   Sammanfattning : Gallium nitride (GaN) based high electron mobility transistors (HEMTs) are promising for power electronic applications due to their high breakdown voltage and power efficiency compared to Si-based power devices. As known, the design of the HEMT has high impact on the performance of the devices. LÄS MER

5. 9. Low-Frequency Noise in InGaAs Nanowire MOSFETs

   Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Författare :Christian Mario Möhle; [2017]
   Nyckelord :Physics and Astronomy;

   Sammanfattning : Low-frequency (LF) noise (1/f as well as random telegraph-signal (RTS) noise) measurements were performed on high-performance InGaAs nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs). 1/f noise measurements at room temperature (RT) show that the dominant noise mechanism is carrier number fluctuations. LÄS MER

7. 10. Design of a Low-Noise Amplifier for Radar Application in the 5 GHz Frequency Band

   Master-uppsats, Högskolan i Gävle/Elektronik

   Författare :Javier Alvaro Rivera Suaña; [2017]
   Nyckelord :;

   Sammanfattning : The purpose of this project was to design and manufacture a Low-Noise Amplifier (LNA) working at a 5 GHz frequency band, by using High Electron Mobility Transistor (HEMT) from Avago Technologies. To improve our design, it was necessary to build a two-stage amplifier; one stage to work in minimum noise sensitivity, and another stage to get the maximum gain achievable by the transistor. LÄS MER