Sökning: "III-V nitride semiconductors"

Hittade 2 uppsatser innehållade orden III-V nitride semiconductors.

1. 1. GaSb nanowire transistors with process induced strain

   Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Förbränningsfysik

   Författare :Edvin Winqvist; [2017]
   Nyckelord :GaSb; gallium; antimonide; nanowire; transistor; strain; physics; thesis; Physics and Astronomy;

   Sammanfattning : With the constant downscaling of Si transistors reaching its limits, other alternatives have been actively researched the past decades. Group III-V semiconductors are excellent materials with generally high carrier mobilities that can replace Si in transistors. LÄS MER

3. 2. Study of the Optical Properties of sp2-Hybridized Boron Nitride

   Master-uppsats, Linköpings universitet/Tillämpad optik

   Författare :Eduardo Antunez de Mayolo; [2014]
   Nyckelord :Spectroscopic ellipsometry; boron nitride; optical properties; materials characterization; III-V nitride semiconductors; cathodoluminescence; electron microscopy; Raman spectroscopy;

   Sammanfattning : Nitride-based semiconductor materials make it possible to fabricate optoelectronic devices that operate in the whole electromagnetic range, since the band gaps of these compounds can be modified by doping. Among these materials, the sp2-hybridized boron nitride has properties that make it a potential candidate for integration in devices operating in the short-wavelength limit, under harsh environment conditions, due to the strength of the B-N bond. LÄS MER