Sökning: "InGaAs"

Visar resultat 1 - 5 av 25 uppsatser innehållade ordet InGaAs.

1. 1. Design and Modeling of InxGa(1−x)As/InP based Nanosheet Field Effect Transistors for High Frequency Applications

   Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

   Författare :Hanyu Liu; Xi Chen; [2023]
   Nyckelord :nanosheet NS ; gate-all-around GAA ; channel release; parasitic channel; MATLAB; COMSOL; technology node; Technology and Engineering;

   Sammanfattning : The advancement of CMOS technology has been fueled by the need to satisfy Moore’s law by shrinking transistors to progressively smaller sizes and increasing the transistor density per unit area [1]. The dimension of the state-of-the-art MOSFET is now down to a few nanometers. LÄS MER

3. 2. Fabrication and Characterization of Quantum-well Field Effect Transistor

   Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknik

   Författare :Yang Fu; [2022]
   Nyckelord :quantum-well field-effect transistor; InGaAs; subthreshold swing; sheet resistance; contact resistance; electron mobility; Post Metallization Annealing; electrostatic control; Physics and Astronomy;

   Sammanfattning : The project aims to optimize the design and fabrication of InGaAs quantum-well field-effect transistor (QW-FET) by investigating transfer and output characteristics of the QW-FET. This work found a lower source/drain contact resistance solution starting with fabricating micrometer-level gate length transistors. LÄS MER

4. 3. Temperature Dependent Electrical Characterisation of Vertical InAs-InGaAs Nanowire MOSFETs

   Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

   Författare :Sofie Johannesson; Sebastian Skog; [2022]
   Nyckelord :Vertical InGaAs Nanowire MOSFET Temperature Dependence Noise; Technology and Engineering;

   Sammanfattning : This thesis presents the temperature dependence of InGaAs Nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) grown at two different temperatures. The two different growths represent one sample having nanowires which have a mixed crystal structure (showing stacking faults) and one sample with nanowires of pure crystal structure (without stacking faults). LÄS MER

5. 4. D-band Power Amplifiers in Vertical InGaAs Nanowire MOSFET Technology for 100 Gbps Wireless Communication

   Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

   Författare :Patrik Blomberg; Ludvig Pile; [2022]
   Nyckelord :D-band; Power Amplifier; Pseudo-differential common source; Stacked; Vertical InGaAs nanowire; MOSFET; Technology and Engineering;

   Sammanfattning : Two different topologies of power amplifiers (PAs) are designed in the frequency range 130-174.8 GHz for use in backhaul transmitters. These are the pseudo-differential common source (PDCS) and the single-ended stacked amplifier topologies. LÄS MER

7. 5. Nanowire based mm-wave LNA and switch design

   Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

   Författare :Andreas Grenmyr; [2020]
   Nyckelord :LNA mm-wave RF switch nanowire MOSFET; Technology and Engineering;

   Sammanfattning : In this work, two LNAs operating at a frequency around 83 GHz and 110 GHz, for satellite- and 5G applications respectively, have been designed, using vertical InGaAs nanowire transistors. In addition, a switch operating at a frequency around 110 GHz has been designed. LÄS MER