Sökning: "MOS transistor"

Visar resultat 1 - 5 av 7 uppsatser innehållade orden MOS transistor.

  1. 1. Fabrication and Characterization of Quantum-well Field Effect Transistor

    Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Yang Fu; [2022]
    Nyckelord :quantum-well field-effect transistor; InGaAs; subthreshold swing; sheet resistance; contact resistance; electron mobility; Post Metallization Annealing; electrostatic control; Physics and Astronomy;

    Sammanfattning : The project aims to optimize the design and fabrication of InGaAs quantum-well field-effect transistor (QW-FET) by investigating transfer and output characteristics of the QW-FET. This work found a lower source/drain contact resistance solution starting with fabricating micrometer-level gate length transistors. LÄS MER

  3. 2. Laminated HZO on InAs: A study of as-deposited ferroelectricity

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :André Andersen; [2022]
    Nyckelord :Ferroelectricity; HZO; InAs; III V; As-deposited ferroelectricity; BEOL; Nanoelectronics; Nanoprocessing; Nanotechnology; ALD; MOSCAP; Memory Technology; Technology and Engineering;

    Sammanfattning : As the limits of transistor feature size scaling is reaching its saturation, new innovations are needed to prevent performance loss. High performance transistors on the III/V semiconductor platform implemented with ferroelectric oxides might in the future satisfy this demand. LÄS MER

  4. 3. Leakage current and breakdown of HfO2/InGaAs MOS capacitors

    Kandidat-uppsats, Lunds universitet/Fysiska institutionen

    Författare :Edvin Winqvist; [2015]
    Nyckelord :breakdown; leakage; ingaas; hfo2; Physics and Astronomy;

    Sammanfattning : With the constant downscaling of transistors, silicon as a production material is falling out of favour because of increasing power consumption when the size of devices becomes smaller. Compound materials from group III-V in the table of elements are promising candidates to replace silicon. LÄS MER

  5. 4. Single Crystalline CVD Diamond Based Devices for Power Electronics Applications

    Master-uppsats, Uppsala universitet/Elektricitetslära

    Författare :Ehrnebo Adrian; [2014]
    Nyckelord :;

    Sammanfattning : Chemical vapor deposited single-crystalline diamond has rare material properties such as thermal conductivity five times as high as copper, a wide band gap, a high breakdown field and high carrier mobilities. This makes it a very interesting material for high power, high frequency and high temperature applications. LÄS MER

  7. 5. RF Sampling by Low Pass ΣΔ Converter for Flexible Receiver Front End

    Master-uppsats, Institutionen för systemteknik

    Författare :Fahad Qazi; [2009]
    Nyckelord :RF sampling; Sampling Mixer; Downconversion; Sigma Delta modulator; Low pass Sigma Delta ADC; Passive Sigma Delta ADC; Mixer inside the loop;

    Sammanfattning : In today’s world the multi-standard wireless receivers are gaining more and more popularity. End-users want to access voice, data and streaming media from a single wireless terminal. An ideal approach for multi-standard receiver front-end is to digitize a wide band RF signal available from the antenna. LÄS MER