Sökning: "MOSFET switching"

Visar resultat 1 - 5 av 14 uppsatser innehållade orden MOSFET switching.

1. 1. AC Gate Bias Stress of 4H-SiC MOSFETs : An investigation into threshold voltage instability of SiC Power MOSFETs under the influence of bipolar gate stress

   Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Författare :Agnimitra Saha; [2023]
   Nyckelord :Silicon Carbide; Gate Bias Stress; Threshold Voltage; On-state Resistance; Temperature; kiselkarbid; gate spännings-stress; tröskelspänning; on-resistansen; temperatur;

   Sammanfattning : Silicon Carbide, a wide band gap (WBG) semiconductor, has pushed electrical limits beyond Silicon (Si) when it comes to power electronics. It has offered the electrification of society showing promise for a greener future. LÄS MER

3. 2. Thermal Modeling and Simulationwith High Voltage Solid StateRelays for Battery DisconnectionApplications : The potential of replacing mechanical contactors with semiconductors

   Uppsats för yrkesexamina på avancerad nivå, Uppsala universitet/Elektricitetslära

   Författare :David Radisic; Johan Mårtensson; [2023]
   Nyckelord :SSR; SSCB; SiC MOSFET; BEV; Pre-charge; Solid-state relay; Solid-state circuit breaker; Electric vehicles; DC fast-charge; Simulink; BDU;

   Sammanfattning : The swift shift of the automotive industry towards electrification is primarily propelled by technological advancements in battery technology. To stay competitive and meet the new demands of the industry, there is a crucial need for novel ideas and innovation. LÄS MER

4. 3. Gate Drive Design for SiC MOSFET Device Characterization : Investigation into the impact of the gate inductance and resistance on the switching behaviour of SiC Power MOSFETs

   Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Författare :Elochukwu Mbah; [2023]
   Nyckelord :Silicon Carbide Power MOSFET; Gate Inductance; Gate Resistance; Miller Period; dv dt and di dt transients; Double Pulse Test; Kiselkarbid Power MOSFET; Gateinduktans; Gate Resistance; Millerperioden; dv dt och di dt transienter; Dubbelpulstest.;

   Sammanfattning : Silicon Carbide as a wide-bandgap semiconductor has several physical and electrical advantages over Silicon for high voltage and high frequency applications. SiC as a MOSFET device has a lot of great characteristics like lower on-resistance and low input capacitances. LÄS MER

5. 4. Investigation of switching power losses of SiC MOSFET : used in a DC/DC Buck converter

   Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Författare :André Xavier Svensson; [2022]
   Nyckelord :Switching power losses; Metal Oxide Semiconductor Field Effect Transistor; Silicon carbide; Synchronous Buck converter; Wide Band Gap; Double Pulse Test; Efficiency; Temperature; Växlande effektförluster; Fälteffekttransistor; Kiselkarbid; Synchronous Buck omvandlare; Wide Band Gap; Double Pulse Test; Verkningsgrad; Temperatur;

   Sammanfattning : All DC/DC converter products include power electronic circuits for power conversion.It is important to find an efficient way for power conversion to reduce power losses and reduce the need for cooling and achieve environmentally friendly solutions.The use of semiconductor switches of wide band gap type is a solution to the problem. LÄS MER

7. 5. Temperature Dependent Electrical Characterisation of Vertical InAs-InGaAs Nanowire MOSFETs

   Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

   Författare :Sofie Johannesson; Sebastian Skog; [2022]
   Nyckelord :Vertical InGaAs Nanowire MOSFET Temperature Dependence Noise; Technology and Engineering;

   Sammanfattning : This thesis presents the temperature dependence of InGaAs Nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) grown at two different temperatures. The two different growths represent one sample having nanowires which have a mixed crystal structure (showing stacking faults) and one sample with nanowires of pure crystal structure (without stacking faults). LÄS MER