Sökning: "Nanowire MOSFET"
Visar resultat 1 - 5 av 14 uppsatser innehållade orden Nanowire MOSFET.
1. Design and Modeling of InxGa(1−x)As/InP based Nanosheet Field Effect Transistors for High Frequency Applications
Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknikSammanfattning : The advancement of CMOS technology has been fueled by the need to satisfy Moore’s law by shrinking transistors to progressively smaller sizes and increasing the transistor density per unit area [1]. The dimension of the state-of-the-art MOSFET is now down to a few nanometers. LÄS MER
2. Temperature Dependent Electrical Characterisation of Vertical InAs-InGaAs Nanowire MOSFETs
Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknikSammanfattning : This thesis presents the temperature dependence of InGaAs Nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) grown at two different temperatures. The two different growths represent one sample having nanowires which have a mixed crystal structure (showing stacking faults) and one sample with nanowires of pure crystal structure (without stacking faults). LÄS MER
3. E-Band SPDT RF Switch for a Class F PA in III-V Nanowire MOSFET Technology
Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknikSammanfattning : This project designs an RF switch operating in E-band to provide a transmit path from a Class-F power amplifier (PA). The basic RF switch is based on the single-pole double-throw (SPDT) topology using shunt transistor switches and two λ/4 transmission line. LÄS MER
4. D-band Power Amplifiers in Vertical InGaAs Nanowire MOSFET Technology for 100 Gbps Wireless Communication
Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknikSammanfattning : Two different topologies of power amplifiers (PAs) are designed in the frequency range 130-174.8 GHz for use in backhaul transmitters. These are the pseudo-differential common source (PDCS) and the single-ended stacked amplifier topologies. LÄS MER
5. Nanowire based mm-wave LNA and switch design
Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknikSammanfattning : In this work, two LNAs operating at a frequency around 83 GHz and 110 GHz, for satellite- and 5G applications respectively, have been designed, using vertical InGaAs nanowire transistors. In addition, a switch operating at a frequency around 110 GHz has been designed. LÄS MER