Sökning: "Paul Din"

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  1. 1. GaSb nanowire transistors with process induced strain

    Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Förbränningsfysik

    Författare :Edvin Winqvist; [2017]
    Nyckelord :GaSb; gallium; antimonide; nanowire; transistor; strain; physics; thesis; Physics and Astronomy;

    Sammanfattning : With the constant downscaling of Si transistors reaching its limits, other alternatives have been actively researched the past decades. Group III-V semiconductors are excellent materials with generally high carrier mobilities that can replace Si in transistors. LÄS MER