Sökning: "Power MOSFET"

Visar resultat 1 - 5 av 38 uppsatser innehållade orden Power MOSFET.

1. 1. AC Gate Bias Stress of 4H-SiC MOSFETs : An investigation into threshold voltage instability of SiC Power MOSFETs under the influence of bipolar gate stress

   Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Författare :Agnimitra Saha; [2023]
   Nyckelord :Silicon Carbide; Gate Bias Stress; Threshold Voltage; On-state Resistance; Temperature; kiselkarbid; gate spännings-stress; tröskelspänning; on-resistansen; temperatur;

   Sammanfattning : Silicon Carbide, a wide band gap (WBG) semiconductor, has pushed electrical limits beyond Silicon (Si) when it comes to power electronics. It has offered the electrification of society showing promise for a greener future. LÄS MER

3. 2. Design and Modeling of InxGa(1−x)As/InP based Nanosheet Field Effect Transistors for High Frequency Applications

   Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

   Författare :Hanyu Liu; Xi Chen; [2023]
   Nyckelord :nanosheet NS ; gate-all-around GAA ; channel release; parasitic channel; MATLAB; COMSOL; technology node; Technology and Engineering;

   Sammanfattning : The advancement of CMOS technology has been fueled by the need to satisfy Moore’s law by shrinking transistors to progressively smaller sizes and increasing the transistor density per unit area [1]. The dimension of the state-of-the-art MOSFET is now down to a few nanometers. LÄS MER

4. 3. Gate Drive Design for SiC MOSFET Device Characterization : Investigation into the impact of the gate inductance and resistance on the switching behaviour of SiC Power MOSFETs

   Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Författare :Elochukwu Mbah; [2023]
   Nyckelord :Silicon Carbide Power MOSFET; Gate Inductance; Gate Resistance; Miller Period; dv dt and di dt transients; Double Pulse Test; Kiselkarbid Power MOSFET; Gateinduktans; Gate Resistance; Millerperioden; dv dt och di dt transienter; Dubbelpulstest.;

   Sammanfattning : Silicon Carbide as a wide-bandgap semiconductor has several physical and electrical advantages over Silicon for high voltage and high frequency applications. SiC as a MOSFET device has a lot of great characteristics like lower on-resistance and low input capacitances. LÄS MER

5. 4. Remaining Useful Life Prediction of Power Electronic Devices Using Recurrent Neural Networks

   Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Författare :Congrui Cai; [2023]
   Nyckelord :Power electronics; Prognostics and health management; Remaining useful life; Recurrent neural network; Kraftelektronik; Prognostik och hälsoledning; Återstående livslängd; Återkommande neurala nätverk;

   Sammanfattning : The growing demand for sustainable technology has led to an increased application of power electronics. As these devices are often exposed to harsh conditions, their reliability is a primary concern for both manufacturers and users. LÄS MER

7. 5. Remote MPPT measurementand logging system for solar modules

   Kandidat-uppsats,

   Författare :Viktor Westberg; Alexander Eklund; [2023]
   Nyckelord :MPPT; solar; LoRa; IoT;

   Sammanfattning : We have designed and built a remote measurement system for evaluating the long-termperformance of solar photovoltaic (PV) modules. The system consists of a measurementdevice connected to the solar module which keeps the PV module at Maximum PowerPoint (MPP) and continuously measures the voltage and current at this point. LÄS MER