Sökning: "RF Switch"

Visar resultat 1 - 5 av 14 uppsatser innehållade orden RF Switch.

  1. 1. Performance of 2-18 GHz RF Switches Implemented in Chip & Wire Technology : Analysis of switch topologies, bias networks and an in-depth EM analysis of bondwires

    Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Författare :Gustav Eliasson; [2023]
    Nyckelord :RF Switch; PIN diode; Chip Wire Technology; Wide Bandwidth; High isolation; Single-Pole-Single-Throw; Single-Pole-Double-Throw RF Switch; PIN diode; Chip Wire Technology; Wide Bandwidth; Single-Pole-SingleThrow; Single-Pole-Double-Throw; RF-omkopplare; PIN-diod; Chip Wire Tekonologi; Bredbandig; Hög isolation; Enkelpolig-enkakast; Enkelpolig-dubbelkast;

    Sammanfattning : The ability to control the path a signal takes through microwave circuitry is crucial when designing RF systems. The component that allows for the control of the signal path is called a switch, and it is the microwave component that this thesis will focus on. LÄS MER

  3. 2. CUSTOMER CHURN PREDICTION MODEL IN TELECOMMUNICATION SECTOR USING MACHINELEARNING TECHNIQUE

    Magister-uppsats, Uppsala universitet/Statistiska institutionen

    Författare :Nayema Taskin; [2023]
    Nyckelord :Telecommunication; Customer Retention; Churn Prediction; Machine Learning.;

    Sammanfattning : Customer churn is a critical problem faced by telecom companies, leading to lost revenue and increased marketing costs. In the highly competitive telecommunication sector, customer retention is essential for success. It costs five to seven times more toacquire a new customer than it does to retain an existing one. LÄS MER

  4. 3. E-Band SPDT RF Switch for a Class F PA in III-V Nanowire MOSFET Technology

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Rungeng Xu; [2022]
    Nyckelord :E-band; III-V Nanowire MOSFET; RF Switch; Class-F PA; Technology and Engineering;

    Sammanfattning : This project designs an RF switch operating in E-band to provide a transmit path from a Class-F power amplifier (PA). The basic RF switch is based on the single-pole double-throw (SPDT) topology using shunt transistor switches and two λ/4 transmission line. LÄS MER

  5. 4. Nanowire based mm-wave LNA and switch design

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Andreas Grenmyr; [2020]
    Nyckelord :LNA mm-wave RF switch nanowire MOSFET; Technology and Engineering;

    Sammanfattning : In this work, two LNAs operating at a frequency around 83 GHz and 110 GHz, for satellite- and 5G applications respectively, have been designed, using vertical InGaAs nanowire transistors. In addition, a switch operating at a frequency around 110 GHz has been designed. LÄS MER

  7. 5. III-V Nanowire MOSFETs for mm-Wave Switch Applications

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Marcus Sandberg; [2020]
    Nyckelord :III-V Nanowire MOSFET; millimeter wave mmW ; millimeter-wave integrated circuit MMIC ; single-pole double-throw SPDT ; Technology and Engineering;

    Sammanfattning : RF-switches are key components in many electronic devices as they enable routing of higher frequency signals. Increasing demands on device performance requires new technologies as well as new approaches to designs of circuits. III-V nanowire MOSFETs are a promising device technology well suited for implementation of switches. LÄS MER