Sökning: "Thermal etching"

Visar resultat 1 - 5 av 8 uppsatser innehållade orden Thermal etching.

  1. 1. BCP Lithography Defined Arrays of InAs NWs Grown Using MOVPE with Au Seeds

    Master-uppsats, Lunds universitet/Lunds Tekniska Högskola; Lunds universitet/Fasta tillståndets fysik

    Författare :Björn Landeke-Wilsmark; [2022]
    Nyckelord :Physics and Astronomy;

    Sammanfattning : In this report we outline a detailed process flow for a quick and inexpensive implementation of large dense arrays of InAs nanowires (NWs) grown in the reactive ion etching/etched (RIE) pores of a SiO2/SiNx mask on top of an InAs/Si(111) substrate. The self-assembled (hexagonally close-packed) pattern of poly(methyl-methacrylate) (PMMA) cylinders in a poly(styrene) (PS) matrix adopted by a linear diblock poly(styrene-block-methyl-methacrylate) P(S-b-MMA) block-copolymer (BCP) was transferred to the dielectric stack (consisting of a ≈10 nm plasma enhanced chemical vapour deposition/deposited (PECVD) SiNX layer topped by a thin atomic layer deposition/deposited (ALD) SiO2 film) using a two-step RIE procedure. LÄS MER

  2. 2. Block copolymer-based hybrid nanomaterials for nanoimprint applications

    Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Lunds Tekniska Högskola

    Författare :Philip Sellin; [2022]
    Nyckelord :Block copolymer; Sequential infiltration synthesis; Nanoimprint lithography; Reactive ion etching; Self-assembly; Thermal annealing; Solvent vapour annealing; Nanoprocessing; Nanofabrication; Antibacterial; Technology and Engineering;

    Sammanfattning : In this Master’s thesis project, a block copolymer (BCP) film was used in combination with sequential infiltration synthesis and etching to manufacture a nanoimprint lithography stamp consisting of silicon. The BCP film was designed to contain perpendicularly aligned hexagonally placed cylinders, a pattern that will later be investigated for antibacterial properties after being transferred via nanoimprint lithography to a polymer film. LÄS MER

  3. 3. Investigation of the heat transfer of enhanced additively manufactured minichannel heat exchangers

    Master-uppsats, KTH/Skolan för industriell teknik och management (ITM)

    Författare :Hamidreza Rastan; [2019]
    Nyckelord :Minichannel; Microchannel; Heat exchanger; Additive manufacturing; 3D printing; Numerical simulation; CFD; Comsol;

    Sammanfattning : Mini-/microchannel components have received attention over the past few decades owing to their compactness and superior thermal performance. Microchannel heat sinks are typically manufactured through traditional manufacturing practices (milling and sawing, electrodischarge machining, and water jet cutting) by changing their components to work in microscale environments or microfabrication techniques (etching and lost wax molding), which have emerged from the semiconductor industry. LÄS MER

  4. 4. Experimental Methodologies for Analyzing Austenite Recrystallization in Martensitic Tool Steels

    Master-uppsats, KTH/Materialvetenskap

    Författare :Robin Nilsson; [2015]
    Nyckelord :Tool steels; Recrystallization; Prior austenite grain boundaries; Martensite; EBSD; Chemical etching; Thermal etching;

    Sammanfattning : Revealing the prior austenite grain boundaries from a martensitic structure is well known to be very difficult and dependent on the chemical composition and the thermomechanical processing of the steel. In the present study, four different chemical etching reagents and additional thermal etching have been conducted for thermomechanical simulated tool steels Orvar Supreme and Stavax ESR. LÄS MER

  5. 5. Characterization of SiGe layers grown by Trisilane and Germane at low temperatures for BiCMOS application

    Master-uppsats, KTH/Skolan för informations- och kommunikationsteknik (ICT)

    Författare :Carmine Cappetta; [2014]
    Nyckelord :;

    Sammanfattning : Low temperature epitaxy (LTE) of SiGe by chemical vapor deposition (CVD) has attracted dramatic attention during the last decade for CMOS and BiCMOS application. LTE relates to a temperature range of 350÷650 °C. LÄS MER