Sökning: "Vertical Cavity Surface Emitting Laser VCSEL"
Hittade 4 uppsatser innehållade orden Vertical Cavity Surface Emitting Laser VCSEL.
1. Prototype Instrumentation for Frequency Domain – Functional Near Infrared Spectroscopy
Master-uppsats, KTH/Skolan för kemi, bioteknologi och hälsa (CBH)Sammanfattning : Frequency domain functional near infrared spectroscopy (FD-fNIRS) is a tissue optical measurement technique used to measure absolute haemoglobin concentrations in brain tissue. This work is intended to be the first step in the development of a wearable, low-cost FD-fNIRS device for neurofeedback applications. LÄS MER
2. Physical modeling of optical modulators for optical link analysis : Optical link analysis in silicon photonics technologies
Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)Sammanfattning : According to the 2018 Ethernet Roadmap projections, the requirements for high speed links keep increasing every year, always keeping an eye on the energy per bit consumption of the communication system. The Ethernet requirements are estimated to reach 1Tbps by 2022-2025. LÄS MER
3. Simulation Study of Epitaxially Regrown Vertical-Cavity Surface-Emitting Lasers
Master-uppsats, KTH/Skolan för informations- och kommunikationsteknik (ICT)Sammanfattning : The vertical-cavity surface-emitting laser or VCSEL is a special type of diode laser, which has established itself in optoelectronic applications asa low-cost, high-quality miniaturized light source. The development of VCSELs can be largely promoted with support from computer simulations. LÄS MER
4. Implantation isolation in AlGaAs/GaAs structures
Uppsats för yrkesexamina på avancerad nivå, KTH/Skolan för informations- och kommunikationsteknik (ICT)Sammanfattning : In this work the effect of implantation isolation in vertical cavity surface emitting laser (VCSEL) samples have been investigated cross sectional measurements using scanning spreading resistance microscopy (SSRM). The samples consist of two AlGaAs/GaAs Distributed Bragg Reflectors (DBR) structures with a GaAs quantum well region sandwiched in between them. LÄS MER