Sökning: "aln"

Visar resultat 11 - 15 av 15 uppsatser innehållade ordet aln.

  1. 11. Thermal Stability of Arc Evaporated ZrCrAlN

    Master-uppsats, Nanostrukturerade material; Tekniska högskolan

    Författare :Muhammad Bilal Syed; [2012]
    Nyckelord :Thermal Stability; ZrCrAlN; Reactive Cathodic Arc Evaporation; Anneal; Age Hardening; XRD; EDS; Nanoindentation; Hardness.;

    Sammanfattning : This research explores the thermal stability of ZrCrAlN material system. For this purpose fourteen different compositions of ZrCrAlN coatings were deposited onto tungsten carbide substrates by using reactive cathodic arc evaporation. These compositions were further annealed at 800oC, 900oC, 1000oC and 1100oC temperatures. LÄS MER

  3. 12. Ab initio piezoelectricity and energy landscape of Y0.375Al0.625N

    Magister-uppsats, Teoretisk Fysik

    Författare :Christopher Tholander; [2011]
    Nyckelord :;

    Sammanfattning : There is high industrial demand for materials with a high piezoelectrical response which are stable at high temperatures. A recent study on ScAlN has explained the microscopic origin of the increased piezoelectric response in the alloy and its effect on the energy landscape. Y is a promising candidate to observe the same phenomena. LÄS MER

  4. 13. Growth and Phase Stability of Titanium Aluminum Nitride Deposited by High Power Impulse Magnetron Sputtering

    Master-uppsats, Plasma och beläggningsfysik

    Författare :Chung-Chuan Lai; [2011]
    Nyckelord :HiPIMS; co-sputtering; diffusion; microstructure; spinodal decomposition; Ti1-xAlxN;

    Sammanfattning : In this work, we investigate the relation between the diffusion behavior of Ti1-xAlxN at elevated temperatures and the microstructure. Thinfilm samples are synthesized by reactive co-sputtering with two cathodes. LÄS MER

  5. 14. Optical Spectroscopy of GaN/Al(Ga)N Quantum Dots Grown by Molecular Beam Epitaxy

    Master-uppsats, Institutionen för fysik, kemi och biologi

    Författare :Kuan-Hung Yu; [2009]
    Nyckelord :Quantum dots; GaN; AlN; Exciton; Biexciton; micro-Photoluminescence.;

    Sammanfattning : GaN quantum dots grown by molecular beam epitaxy are examined by micro-photoluminescence. The exciton and biexciton emission are identified successfully by power-dependence measurement. With two different samples, it can be deduced that the linewidth of the peaks is narrower in the thicker deposited layer of GaN. LÄS MER

  7. 15. Characterization of AlGaN HEMT structures

    Uppsats för yrkesexamina på grundnivå, Institutionen för fysik, kemi och biologi

    Författare :Anders Lundskog; [2007]
    Nyckelord :HEMT; Hot-Wall MOCVD; GaN; AlGaN; AlN exclusionlayer; Double heterojunction; 1D Poisson-Schrödinger;

    Sammanfattning : During the last decade, AlGaN High Electron Mobility Transistors (HEMTs) have been intensively studied because their fundamental electrical properties make them attractive for highpower microwave device applications. Despite much progress, AlGaN HEMTs are far from fully understood and judged by the number of published papers the understanding of advanced structures is even poorer. LÄS MER