Sökning: "band gap"

Visar resultat 1 - 5 av 108 uppsatser innehållade orden band gap.

  1. 1. Time-based Key for Coverless Audio Steganography: A Proposed Behavioral Method to Increase Capacity

    Uppsats för yrkesexamina på avancerad nivå, Blekinge Tekniska Högskola/Institutionen för datavetenskap

    Författare :John Alanko Öberg; Carl Svensson; [2023]
    Nyckelord :Coverless audio steganography; information hiding; covert communication; effective capacity; behavioral; Täcklös ljudsteganografi; informationsdöljning; hemlig kommunikation; effektiv kapacitet; beteendemässig;

    Sammanfattning : Background. Coverless steganography is a relatively unexplored area of steganography where the message is not embedded into a cover media. Instead the message is derived from one or several properties already existing in the carrier media. This renders steganalysis methods used for traditional steganography useless. LÄS MER

  3. 2. AC Gate Bias Stress of 4H-SiC MOSFETs : An investigation into threshold voltage instability of SiC Power MOSFETs under the influence of bipolar gate stress

    Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Författare :Agnimitra Saha; [2023]
    Nyckelord :Silicon Carbide; Gate Bias Stress; Threshold Voltage; On-state Resistance; Temperature; kiselkarbid; gate spännings-stress; tröskelspänning; on-resistansen; temperatur;

    Sammanfattning : Silicon Carbide, a wide band gap (WBG) semiconductor, has pushed electrical limits beyond Silicon (Si) when it comes to power electronics. It has offered the electrification of society showing promise for a greener future. LÄS MER

  4. 3. Towards a setup for narrowband terahertz generation through difference-frequency mixing of chirped ultrashort pulses

    Master-uppsats, Lunds universitet/Atomfysik; Lunds universitet/Fysiska institutionen

    Författare :Isa Clementsson; [2023]
    Nyckelord :Physics and Astronomy;

    Sammanfattning : Terahertz radiation is a useful tool for inducing lower-energy excitations in matter, where it can be used to cause structural changes through direct interaction with the crystal lattice. Sub-picosecond optical pulses can be used to generate intense broadband terahertz pulses through optical rectification in nonlinear crystals, reaching peak electric fields of several MV/m and conversion efficiencies as high as a few percent. LÄS MER

  5. 4. Radiation Effects on GaN-based HEMTs for RF and Power Electronic Applications

    Master-uppsats, KTH/Tillämpad fysik

    Författare :Wilhelm Holmberg; [2023]
    Nyckelord :High Electron Mobility Transistor; HEMT; Gallium Nitride; GaN; Silicon Carbide; SiC; Proton Radiation; Galliumnitrid; GaN; Kiselkarbid; SiC; Kisel; Si; HEMT; Transistor; Protonstrålning;

    Sammanfattning : GaN-HEMTs (Gallium Nitride-based High Electron Mobility Transistors) have, thanks to the large band gap of GaN, electrical properties that are suitable for applications of high electrical voltages, high currents, and fast switching. The large band gap also gives GaN-HEMTs a high resistance to radiation. LÄS MER

  7. 5. Quantum Transport in Topological Insulator Nanowires

    Master-uppsats, KTH/Fysik

    Författare :Sergi Pradas Rodriguez; [2023]
    Nyckelord :quantum transport; topological insulators; nanowires; numerical analysis; Kwant; etc.; kvanttransport; topologiska isolatorer; nanotrådar; numerisk analys; Kvant; etc.;

    Sammanfattning : Three-dimensional topological insulators are materials that have a bulk band gap like a traditional insulator, but which hold topologically protected conducting surface states. In this thesis we present a numerical analysis of the surface states of topological insulator nanowires in the tight-binding approximation. LÄS MER