Sökning: "co-sputtering"

Hittade 4 uppsatser innehållade ordet co-sputtering.

  1. 1. Finite-size effect in CoAlZr/AlZr multilayers

    Uppsats för yrkesexamina på avancerad nivå, Uppsala universitet/Materialfysik

    Författare :Fredrik Backer-Meurke; [2018]
    Nyckelord :Magnetism; thin film; Co; AlZr; Magnetic materials;

    Sammanfattning : The structural and magnetic properties of amorphous Cox(Al80Zr20)1-x multilayers with varying thicknesses of the magnetic bilayers have been investigated. The reduction of the thickness causes a reduction of the critical temperature, Tc, this is known as the finite-size effect. LÄS MER

  3. 2. Growth and Phase Stability of Titanium Aluminum Nitride Deposited by High Power Impulse Magnetron Sputtering

    Master-uppsats, Plasma och beläggningsfysik

    Författare :Chung-Chuan Lai; [2011]
    Nyckelord :HiPIMS; co-sputtering; diffusion; microstructure; spinodal decomposition; Ti1-xAlxN;

    Sammanfattning : In this work, we investigate the relation between the diffusion behavior of Ti1-xAlxN at elevated temperatures and the microstructure. Thinfilm samples are synthesized by reactive co-sputtering with two cathodes. LÄS MER

  4. 3. Experimental study of Cu2ZnSnS4 thin films for solar cells

    Master-uppsats, Fasta tillståndets elektronik

    Författare :Hendrik Flammersberger; [2010]
    Nyckelord :;

    Sammanfattning : Cu2ZnSnS4 (CZTS) is a semiconductor with a direct band gap of about 1,5 eV and anabsorption coefficient of 10^4 cm^-1, and is for this reason a potential thin film solarcell material. Demonstrated efficiencies of up to 6,8% as well as use of cheap andabundant elements make CZTS a promising alternative to current solar cells. LÄS MER

  5. 4. Growth of GaN on lattice matched AlInN substrates

    Uppsats för yrkesexamina på grundnivå, Institutionen för fysik, kemi och biologi

    Författare :Muhammad Boota; Reem Rahmatalla; [2008]
    Nyckelord :;

    Sammanfattning : This project was planed in order to study the effect of growth and crystalline quality of GaN on lattice matched Al1-xInxN seed layer. The GaN lattice matched Al0.81Ino. LÄS MER