Sökning: "electron mobility"

Visar resultat 1 - 5 av 32 uppsatser innehållade orden electron mobility.

  1. 1. Off-State Stress Effects in AlGaN/GaN HEMTs : Investigation of high-voltage off-state stress impact on performance of and its retention in hybrid-drain ohmic gate AlGaN/GaN HEMTs

    Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Författare :Ivan Krsic; [2023]
    Nyckelord :HEMT; GaN; off-state stress; memory effects; drain leakage current; dynamic RDSon; threshold voltage instabilities; charge redistribution; HEMT; GaN; stress i avslaget tillstånd; minneseffekter; läckströmmen; dynamisk RDSon; instabiliteten hos styrets tröskelspänning; omfördelningen av laddningar;

    Sammanfattning : High electron mobility transistors (HEMTs) realized using AlxGa1-xN/GaN are relatively new technology which is prominent for high-speed and high-power applications. Some of the main problems with this technology were identified as dynamic RDSon, current collapse and threshold voltage instabilities due to the off-state stress. LÄS MER

  3. 2. Localized and extended states in finite-sized mosaic Wannier-Stark lattices

    Master-uppsats, KTH/Tillämpad fysik

    Författare :Emrah Tortumlu; [2023]
    Nyckelord :Applied Physics; Condensed matter physics; quantum technology; quantum nanophotonics; localization; mobility edge; phase transition; Tillämpad Fysik; Kondenserade materiens fysik; kvantteknologi; kvantnanofotonik; lokalisering; fasövergång;

    Sammanfattning : Anderson localization occurs when an otherwise conductive solid becomes insulatingdue to a sufficiently large degree of disorder in the medium. The electron band energy(as a function of disorder) at which this transition between extended and localizedelectron states occur is called the mobility edge (ME) and is energy-dependent only in3-dimensional systems. LÄS MER

  4. 3. In-Situ Investigation of Particle Assisted GaSb Nucleation Using Environmental TEM

    Master-uppsats, Lunds universitet/Centrum för analys och syntes

    Författare :Aidas Urbonavicius; [2023]
    Nyckelord :ETEM; Nucleation; GaSb; Nanowires; Materials chemistry; Technology and Engineering; Chemistry;

    Sammanfattning : III-V semiconductor material based nanowires have been extensively studied and shown to be a very exciting building block for future electronics. Material systems such as GaSb show a lot of promise in optoelectric and thermoelectric generation applications because of its high electron mobility and small bandgap. LÄS MER

  5. 4. Superconducting gates for InP HEMTs

    Master-uppsats, KTH/Tillämpad fysik

    Författare :Sebastian Alveteg; [2023]
    Nyckelord :Cryogenic electronics; HEMT; Superconductors; Applied Physics; Kryogenisk elektronik; HEMT; Supraledare; Tillämpad fysik;

    Sammanfattning : The thesis examines the prospects of using the superconductor NbN as the gatemetal for an InP HEMT. A HEMT or High Electron Mobility Transistor is aheterostructure transistor engineered to reach very high electron mobility. InPHEMTs are used as cryogenic Low Noise Amplifiers (LNAs), which have increasedin demand as quantum computing is scaling up. LÄS MER

  7. 5. Radiation Effects on GaN-based HEMTs for RF and Power Electronic Applications

    Master-uppsats, KTH/Tillämpad fysik

    Författare :Wilhelm Holmberg; [2023]
    Nyckelord :High Electron Mobility Transistor; HEMT; Gallium Nitride; GaN; Silicon Carbide; SiC; Proton Radiation; Galliumnitrid; GaN; Kiselkarbid; SiC; Kisel; Si; HEMT; Transistor; Protonstrålning;

    Sammanfattning : GaN-HEMTs (Gallium Nitride-based High Electron Mobility Transistors) have, thanks to the large band gap of GaN, electrical properties that are suitable for applications of high electrical voltages, high currents, and fast switching. The large band gap also gives GaN-HEMTs a high resistance to radiation. LÄS MER