Sökning: "elektriska kretsar"

Visar resultat 16 - 20 av 37 uppsatser innehållade orden elektriska kretsar.

  1. 16. Analogiskt tänkande för elektriska kretsar

    Kandidat-uppsats, Uppsala universitet/Fysikundervisningens didaktik

    Författare :Andreas Ringstam; [2019]
    Nyckelord :Analogi; Transduktion; Analogiskt tänkande;

    Sammanfattning : Physics makes use of analogies to explain new phenomena using our understanding of more familiar phenomena. This thesis studies how pairs of university students reason when they encounter problems in physics that require explicit analogical reasoning. LÄS MER

  3. 17. Hybrid Semantics in Equation-Based Modeling

    Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Författare :Oscar Eriksson; [2018]
    Nyckelord :;

    Sammanfattning : Equation-based object-oriented modeling languages represent a highly composable class of modeling languages. In these languages models are expressed as differential-algebraic equations with no explicit causal relation between variables. LÄS MER

  4. 18. Capacitance Optimization and Ballistic Modeling of Nanowire Transistors

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Azal Alothmani; [2018]
    Nyckelord :Nanowire transistor; 1-D MOSFET; RF performance; permittivity; parasitic capacitance; HSQ; COMSOL Multiphysics; Technology and Engineering;

    Sammanfattning : Downscaling of Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs) has contributed to increased microchip device density and to improve the functionality of the electronic circuits. The dimensions of state of art MOSFET is down to a few nanometers. It has been demonstrated that smaller MOSFETs are faster and more energy-efficient. LÄS MER

  5. 19. Fabrication and characterization of gate last Si MOSFETs with SiGe source and drain

    Master-uppsats, KTH/Skolan för informations- och kommunikationsteknik (ICT)

    Författare :Björn Christensen; [2017]
    Nyckelord :MOSFET fabrication; gate last; SiGe source and drain; IDP gate; epitaxy; MOSFET fabrication; gate last; SiGe source and drain; IDP gate; epitaxy;

    Sammanfattning : The continuous evolution of digital technology we enjoy today is the result of ever shrinking, faster and cheaper transistors that make up the ubiquitous integrated circuits of our devices. Over the decades, the industry has gone from purely geometrical scaling to innovative solutions like high-k dielectrics combined with metal gates and FinFETs. LÄS MER

  7. 20. Epitaxial growth and processing of high-aspect ratio InGaAs fins for advanced MOSFETs

    Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

    Författare :Andreas Malmgren; [2017]
    Nyckelord :FinFET; metalorganic vapor phase epitaxy; reciprocal space mapping; Technology and Engineering; Physics and Astronomy;

    Sammanfattning : In this thesis, InGaAs fins with vertical sidewalls consisting of {110} facets were epitaxially grown on InP(111)B substrates using metalorganic vapor phase epitaxy. A lithography patterned hydrogen silsesquixane growth mask was used to promote the formation of vertical {110} facets during the growth. LÄS MER