Sökning: "epitaxy"

Visar resultat 1 - 5 av 37 uppsatser innehållade ordet epitaxy.

  1. 1. Heteroepitaxial Growth of GaN Film on Si substrate by Magnetron Sputtering

    Master-uppsats, Linköpings universitet/Institutionen för fysik, kemi och biologi

    Författare :Zahra Mohammadianrasnani; [2023]
    Nyckelord :GaN; Sputter epitaxy; Thin film;

    Sammanfattning : In this study, the effect of AlN buffer layer structure and morphology on the GaN films deposited on Si (111) substrate by reactive DC magnetron sputtering have been studied. For structural and morphological characterization X-ray diffraction (XRD) and Scanning electron microscope (SEM) were used. LÄS MER

  3. 2. Fabrication and characterization of GaAsxP1-x single junction solar cell on Si for III-V/Si tandem solar cell

    Master-uppsats, KTH/Tillämpad fysik

    Författare :Elaheh Aghajafari; [2023]
    Nyckelord :III-V semiconductor; GaAsxP1-x heteroeputaxy; hydride vapor phase epitaxy; III-V Si solar cell; III-V halvledare; GaAsxP1-x epitaxiallager; hydridångfasepitaxi; III-V Si solcell;

    Sammanfattning : Silicon based solar cells have been used as photovoltaic devices for decades due to reasonable cost and environment- friendly nature of silicon. But the conversion efficiency of silicon solar cell is limited; for instance, the maximum conversion efficiency of a crystalline silicon solar cell available in the market developed by Kaneka Corporation is 26 % [1]. LÄS MER

  4. 3. Development of thick GaN and AlGaN drift layers for vertical power devices

    Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Författare :Andri Dhora; [2023]
    Nyckelord :Technology and Engineering;

    Sammanfattning : High-quality, thick III-nitride epitaxial drift layers with controlled doping are needed for next-generation highly efficient vertical power devices for a smart grid applications and electrification of mobility. Achieving desirable material properties, such as low background impurity concentrations and reduced dislocation densities in combination with high growth rates, necessary for practical application present a challenge. LÄS MER

  5. 4. BCP Lithography Defined Arrays of InAs NWs Grown Using MOVPE with Au Seeds

    Master-uppsats, Lunds universitet/Lunds Tekniska Högskola; Lunds universitet/Fasta tillståndets fysik

    Författare :Björn Landeke-Wilsmark; [2022]
    Nyckelord :Physics and Astronomy;

    Sammanfattning : In this report we outline a detailed process flow for a quick and inexpensive implementation of large dense arrays of InAs nanowires (NWs) grown in the reactive ion etching/etched (RIE) pores of a SiO2/SiNx mask on top of an InAs/Si(111) substrate. The self-assembled (hexagonally close-packed) pattern of poly(methyl-methacrylate) (PMMA) cylinders in a poly(styrene) (PS) matrix adopted by a linear diblock poly(styrene-block-methyl-methacrylate) P(S-b-MMA) block-copolymer (BCP) was transferred to the dielectric stack (consisting of a ≈10 nm plasma enhanced chemical vapour deposition/deposited (PECVD) SiNX layer topped by a thin atomic layer deposition/deposited (ALD) SiO2 film) using a two-step RIE procedure. LÄS MER

  7. 5. Magnetron Sputter Epitaxy of High-quality GaNand Plasma Characterization of the Process : Degree Project–Master’s Thesis

    Master-uppsats, Linköpings universitet/Tunnfilmsfysik

    Författare :Yi-Ling Lo; [2021]
    Nyckelord :GaN; Semiconductors; Nanomaterials; Thin film; Magnetron Sputtering; Epitaxy; XRD; Physical Vapor Deposition;

    Sammanfattning : Several sputtering depositions were done by direct current (DC) magnetron sputtering epitaxy (MSE) techniquefor the goal of improving the growth rate and crystalline quality of GaN thin film on Al2O3 substrate. Thegrowth rate was higher when substrate-to-target distance D = 7 cm compared with D = 9. LÄS MER