Sökning: "epitaxy"

Visar resultat 21 - 25 av 37 uppsatser innehållade ordet epitaxy.

  1. 21. Epitaxial and bulk growth of cubic silicon carbide on off-oriented 4H-silicon carbide substrates

    Master-uppsats, Linköpings universitet/Halvledarmaterial

    Författare :Olof Norén; [2015]
    Nyckelord :Silicon carbide; Cubic silicon carbide; 3C-SiC; Bulk; Sublimation epitaxy; Seeded sublimation growth;

    Sammanfattning : The growth of bulk cubic silicon carbide has for a long time seemed to be something for the future. However, in this thesis the initial steps towards bulk cubic silicon carbide have been taken. LÄS MER

  3. 22. Optical properties of free-standing cubic silicon carbide

    Master-uppsats, Linköpings universitet/Halvledarmaterial; Linköpings universitet/Tekniska fakulteten

    Författare :Mattias Jansson; [2015]
    Nyckelord :semiconductor; silicon carbide; SiC; photovoltaic; water splitting; sublimation;

    Sammanfattning : The properties of free-standing cubic silicon carbide for optoelectronic applications are explored in this work. The main focus of the work is on boron doped cubic silicon carbide, which is proposed as a highly useful material in several optoelectronic applications. LÄS MER

  4. 23. Development of All Dry Nanoimprint Lift-Off Process for Growth of Nanowires

    Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

    Författare :Yasna Aberi; [2014]
    Nyckelord :Physics and Astronomy;

    Sammanfattning : In this project, nanoimprint lithography has been applied to define gold particles on the surface of an InP wafer. For achieving this aim, a dry etching process has been developed to create resist undercut for the lift-off. LÄS MER

  5. 24. Processing Technology for Si Based Tandem Solar Cells

    Master-uppsats, KTH/Skolan för informations- och kommunikationsteknik (ICT)

    Författare :Nedim Aydinci; [2014]
    Nyckelord :;

    Sammanfattning : This project focuses on the investigation of Silicon based Tandem solar cell fabricated by using the Hydride Vapor Phase Epitaxy (HVPE). In the state-of-the-art multi-junction solar cell manufacturing epitaxial technologies are used for sub-cell formation, such as MOVPE (Metal Organic Vapour Phase Epitaxy) [1] or MBE (Molecular Beam Epitaxy) [2]. LÄS MER

  7. 25. Characterization of SiGe layers grown by Trisilane and Germane at low temperatures for BiCMOS application

    Master-uppsats, KTH/Skolan för informations- och kommunikationsteknik (ICT)

    Författare :Carmine Cappetta; [2014]
    Nyckelord :;

    Sammanfattning : Low temperature epitaxy (LTE) of SiGe by chemical vapor deposition (CVD) has attracted dramatic attention during the last decade for CMOS and BiCMOS application. LTE relates to a temperature range of 350÷650 °C. LÄS MER