Sökning: "high-electron-mobility transistor"

Visar resultat 1 - 5 av 10 uppsatser innehållade orden high-electron-mobility transistor.

1. 1. Off-State Stress Effects in AlGaN/GaN HEMTs : Investigation of high-voltage off-state stress impact on performance of and its retention in hybrid-drain ohmic gate AlGaN/GaN HEMTs

   Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Författare :Ivan Krsic; [2023]
   Nyckelord :HEMT; GaN; off-state stress; memory effects; drain leakage current; dynamic RDSon; threshold voltage instabilities; charge redistribution; HEMT; GaN; stress i avslaget tillstånd; minneseffekter; läckströmmen; dynamisk RDSon; instabiliteten hos styrets tröskelspänning; omfördelningen av laddningar;

   Sammanfattning : High electron mobility transistors (HEMTs) realized using AlxGa1-xN/GaN are relatively new technology which is prominent for high-speed and high-power applications. Some of the main problems with this technology were identified as dynamic RDSon, current collapse and threshold voltage instabilities due to the off-state stress. LÄS MER

3. 2. Superconducting gates for InP HEMTs

   Master-uppsats, KTH/Tillämpad fysik

   Författare :Sebastian Alveteg; [2023]
   Nyckelord :Cryogenic electronics; HEMT; Superconductors; Applied Physics; Kryogenisk elektronik; HEMT; Supraledare; Tillämpad fysik;

   Sammanfattning : The thesis examines the prospects of using the superconductor NbN as the gatemetal for an InP HEMT. A HEMT or High Electron Mobility Transistor is aheterostructure transistor engineered to reach very high electron mobility. InPHEMTs are used as cryogenic Low Noise Amplifiers (LNAs), which have increasedin demand as quantum computing is scaling up. LÄS MER

4. 3. Radiation Effects on GaN-based HEMTs for RF and Power Electronic Applications

   Master-uppsats, KTH/Tillämpad fysik

   Författare :Wilhelm Holmberg; [2023]
   Nyckelord :High Electron Mobility Transistor; HEMT; Gallium Nitride; GaN; Silicon Carbide; SiC; Proton Radiation; Galliumnitrid; GaN; Kiselkarbid; SiC; Kisel; Si; HEMT; Transistor; Protonstrålning;

   Sammanfattning : GaN-HEMTs (Gallium Nitride-based High Electron Mobility Transistors) have, thanks to the large band gap of GaN, electrical properties that are suitable for applications of high electrical voltages, high currents, and fast switching. The large band gap also gives GaN-HEMTs a high resistance to radiation. LÄS MER

5. 4. Fabrication and Characterization of Quantum-well Field Effect Transistor

   Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknik

   Författare :Yang Fu; [2022]
   Nyckelord :quantum-well field-effect transistor; InGaAs; subthreshold swing; sheet resistance; contact resistance; electron mobility; Post Metallization Annealing; electrostatic control; Physics and Astronomy;

   Sammanfattning : The project aims to optimize the design and fabrication of InGaAs quantum-well field-effect transistor (QW-FET) by investigating transfer and output characteristics of the QW-FET. This work found a lower source/drain contact resistance solution starting with fabricating micrometer-level gate length transistors. LÄS MER

7. 5. Characterisation of GaN HEMTs on Different Substrates for Power Electronics Applications

   Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Författare :Hithiksha Krishna Murthy; [2022]
   Nyckelord :Gallium nitrate; High Mobility Electron Transistor; Silicon carbide; Silicon; Sapphire; substrates; power electronics;

   Sammanfattning : GaN-based High Electron Mobility Transistors (HEMT) are appealing because of their large breakdown field, high saturation velocity, and superior thermal conductivity. They work at high temperature without much degradation. HEMTs have a few drawbacks despite many positives. The cost of developing GaN HEMTs on a native substrate is high. LÄS MER