Sökning: "hydride vapor phase epitaxy"

Hittade 4 uppsatser innehållade orden hydride vapor phase epitaxy.

  1. 1. Fabrication and characterization of GaAsxP1-x single junction solar cell on Si for III-V/Si tandem solar cell

    Master-uppsats, KTH/Tillämpad fysik

    Författare :Elaheh Aghajafari; [2023]
    Nyckelord :III-V semiconductor; GaAsxP1-x heteroeputaxy; hydride vapor phase epitaxy; III-V Si solar cell; III-V halvledare; GaAsxP1-x epitaxiallager; hydridångfasepitaxi; III-V Si solcell;

    Sammanfattning : Silicon based solar cells have been used as photovoltaic devices for decades due to reasonable cost and environment- friendly nature of silicon. But the conversion efficiency of silicon solar cell is limited; for instance, the maximum conversion efficiency of a crystalline silicon solar cell available in the market developed by Kaneka Corporation is 26 % [1]. LÄS MER

  3. 2. Properties of epitaxial lateral overgrowth of GaAsP and GaAs grown by hydride vapor phase epitaxy

    Master-uppsats, KTH/Tillämpad fysik

    Författare :Lakshman Srinivasan; [2020]
    Nyckelord :GaAsP; ELOG; HVPE; Photoluminescence; Raman;

    Sammanfattning : Direct heteroepitaxy of III-Vs on silicon (Si) has always been a challenge and there are various strategies to integrate these materials. This thesis deals with one such strategy known as Epitaxial lateral overgrowth (ELOG) which is extensively supported by experiments. LÄS MER

  4. 3. Properties of III-V semiconductor materials grown by HVPE

    Master-uppsats, KTH/Skolan för informations- och kommunikationsteknik (ICT)

    Författare :Stamoulis Stergiakis; [2016]
    Nyckelord :;

    Sammanfattning : This thesis focuses on the characterization of lll-V semiconductor materials by using Scanning Electron Microscopy equipped with Energy Dispersive Spectroscopy (SEM-EDS), High Resolution X-ray Diffraction (HRXRD), Atomic Force Microscopy (AFM) and Photoluminescence (PL). In XRD characterization, the rocking curve measurement was conducted to evaluate the composition of III-V semiconductor alloys and the Reciprocal Lattice Mapping (RLM) revealed the detailed structural properties of heteroepitaxial III-V semiconductors. LÄS MER

  5. 4. Processing Technology for Si Based Tandem Solar Cells

    Master-uppsats, KTH/Skolan för informations- och kommunikationsteknik (ICT)

    Författare :Nedim Aydinci; [2014]
    Nyckelord :;

    Sammanfattning : This project focuses on the investigation of Silicon based Tandem solar cell fabricated by using the Hydride Vapor Phase Epitaxy (HVPE). In the state-of-the-art multi-junction solar cell manufacturing epitaxial technologies are used for sub-cell formation, such as MOVPE (Metal Organic Vapour Phase Epitaxy) [1] or MBE (Molecular Beam Epitaxy) [2]. LÄS MER