Sökning: "indium arsenide InAs"

Hittade 4 uppsatser innehållade orden indium arsenide InAs.

  1. 1. The STM Study of Bi Adsorption on the InAs(111)B Surface

    Master-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Författare :Jung-Ching Liu; [2019]
    Nyckelord :bismuth; indium arsenide 111 B; adsorption; surface; scanning tunneling microscopy; Physics and Astronomy;

    Sammanfattning : Semiconductors composed of group III and group V elements have a variety of promising applications, such as topological insulators and quantum computers. Among this category of semiconductors, bismuth (Bi)-containing III-V compounds are able to make these applications possible. LÄS MER

  2. 2. Using gallium nitride nanowires as STM probes

    Kandidat-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Författare :Karolis Sulinskas; [2018]
    Nyckelord :STM; STS; Nanowire; GaN; InAs; Semiconductors; Physics and Astronomy;

    Sammanfattning : Gallium nitride (GaN) nanowires grown using catalyst-free metal organic vapor phase epitaxy were used as scanning tunneling microscope (STM) probes. The probes were prepared by placing a GaN nanowire on a tungsten STM probe using a nanomanipulator in a scanning electron microscope (SEM) and welding them together using an electron beam induced platinum deposition. LÄS MER

  3. 3. Femtosecond Photoemission Electron Microscopy of Indium Arsenide Nanowires

    Kandidat-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Författare :Björn Johansson; [2018]
    Nyckelord :Indium Arsenide; PEEM; Femtosecond laser; Time-resolved PEEM; InAs; Wurtzite; zinc blende; pump-probe; Photoemission Electron Microscopy; pulsed laser.; Physics and Astronomy;

    Sammanfattning : PhotoEmission Electron Microscopy (PEEM) has proven to be a successful method for examining the electronic characteristics of nanostructures. The experiments relevant for the following report were conducted using a combination of PEEM and a femtosecond pulsed laser to determine the electrical characteristics of Indium Arsenide nanowire of crystal structure varying between wurtzite and zinc blend. LÄS MER

  4. 4. InAs and high-k oxides, a scanning tunnelling study of their interfaces

    Kandidat-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Författare :Mattias Åstrand; [2018]
    Nyckelord :Semiconductor; High-k; Atomic layer deposition; Scanning tunnelling microscopy; Scanning tunnelling spectroscopy; Physics and Astronomy;

    Sammanfattning : In order for semiconductor materials to be suitable for implementation in new and progressive devices they have to be of better electronic characteristics than currently used materials, and maintain these once treated and put into action. It is important to verify that bulk characteristics are not hindered at the surface when a given semiconductor is put in contact with another material due to necessity. LÄS MER