Sökning: "indium arsenide InAs"

Visar resultat 1 - 5 av 7 uppsatser innehållade orden indium arsenide InAs.

  1. 1. Thermoelectric measurements on InAs nanowires with a ratchet-barrier

    Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

    Författare :Hanna Lundström; [2022]
    Nyckelord :Physics and Astronomy;

    Sammanfattning : Efficient extraction of thermal energy from electrons at the micro- and nanoscale is a long-standing scientific goal that could enable novel types of heat engines, heat management, and solar cell applications. Semiconductor nanowires are a promising system for investigating such devices for several reasons, such as their thermoelectric properties, and the potential to be grown in heterostructures with high flexibility. LÄS MER

  3. 2. Fabrication Development of InAs-Pb Nanodevices

    Uppsats för yrkesexamina på avancerad nivå, Luleå tekniska universitet/Institutionen för teknikvetenskap och matematik

    Författare :Bo Rasmus Edholm; [2022]
    Nyckelord :Nanofabrication; Qubit; InAs; SAG; Nanowire; Lithography; EBL;

    Sammanfattning : Research groups around the world are looking to develop a qubit protected from decoherence for achieving quantum advantage in computations. This would have huge impact on the modern world. The applications are many from drug development to cryptography and many more  elds. LÄS MER

  4. 3. Polymer Assisted Transfer of Graphene onto Semiconductor Substrates

    Kandidat-uppsats, Lunds universitet/Förbränningsfysik; Lunds universitet/Synkrotronljusfysik

    Författare :Jonathan Frisby; [2020]
    Nyckelord :Physics and Astronomy;

    Sammanfattning : Since first being isolated in 2004, Graphene has been researched heavily because of its unique properties. Recently, interest has grown in graphene/semiconductor heterostructures. In this work, the transfer of graphene through the use of cellulose acetate butyrate (CAB) polymer is studied. LÄS MER

  5. 4. The STM Study of Bi Adsorption on the InAs(111)B Surface

    Master-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Författare :Jung-Ching Liu; [2019]
    Nyckelord :bismuth; indium arsenide 111 B; adsorption; surface; scanning tunneling microscopy; Physics and Astronomy;

    Sammanfattning : Semiconductors composed of group III and group V elements have a variety of promising applications, such as topological insulators and quantum computers. Among this category of semiconductors, bismuth (Bi)-containing III-V compounds are able to make these applications possible. LÄS MER

  7. 5. Using gallium nitride nanowires as STM probes

    Kandidat-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Författare :Karolis Sulinskas; [2018]
    Nyckelord :STM; STS; Nanowire; GaN; InAs; Semiconductors; Physics and Astronomy;

    Sammanfattning : Gallium nitride (GaN) nanowires grown using catalyst-free metal organic vapor phase epitaxy were used as scanning tunneling microscope (STM) probes. The probes were prepared by placing a GaN nanowire on a tungsten STM probe using a nanomanipulator in a scanning electron microscope (SEM) and welding them together using an electron beam induced platinum deposition. LÄS MER