Sökning: "sublimation epitaxy"

Hittade 4 uppsatser innehållade orden sublimation epitaxy.

  1. 1. Doped 3C-SiC Towards Solar Cell Applications

    Master-uppsats, Linköpings universitet/Halvledarmaterial

    Författare :Mattias Jons; [2018]
    Nyckelord :Silicon carbide; 3C-SiC; sublimation epitaxy; ohmic contact; photovoltaic; solar cell;

    Sammanfattning : The market for renewable energy sources, and solar cells in particular is growing year by year, as a result there is a large interest in research on new materials and new technologies for solar power applications. In this thesis the photovoltaic properties of cubic silicon carbide (3C-SiC) has been investigated. LÄS MER

  3. 2. Epitaxial and bulk growth of cubic silicon carbide on off-oriented 4H-silicon carbide substrates

    Master-uppsats, Linköpings universitet/Halvledarmaterial

    Författare :Olof Norén; [2015]
    Nyckelord :Silicon carbide; Cubic silicon carbide; 3C-SiC; Bulk; Sublimation epitaxy; Seeded sublimation growth;

    Sammanfattning : The growth of bulk cubic silicon carbide has for a long time seemed to be something for the future. However, in this thesis the initial steps towards bulk cubic silicon carbide have been taken. LÄS MER

  4. 3. Optical properties of free-standing cubic silicon carbide

    Master-uppsats, Linköpings universitet/Halvledarmaterial; Linköpings universitet/Tekniska fakulteten

    Författare :Mattias Jansson; [2015]
    Nyckelord :semiconductor; silicon carbide; SiC; photovoltaic; water splitting; sublimation;

    Sammanfattning : The properties of free-standing cubic silicon carbide for optoelectronic applications are explored in this work. The main focus of the work is on boron doped cubic silicon carbide, which is proposed as a highly useful material in several optoelectronic applications. LÄS MER

  5. 4. Polytype formation in sublimation epitaxy of SiC on low off-axis substrates.

    Master-uppsats, Halvledarmaterial; Tekniska högskolan

    Författare :Björn Lundqvist; [2011]
    Nyckelord :Sublimation; epitaxy; SiC; polytype;

    Sammanfattning : Sublimation epitaxy of SiC on low off-axis substrates was performed. The growth was performed at different temperatures, mainly under vacuum conditions or with an initial atmosphere of N2 at 0.5 mbar (RT). LÄS MER