Sökning: "test access mechanism"
Visar resultat 1 - 5 av 20 uppsatser innehållade orden test access mechanism.
- Master-uppsats, Uppsala universitet/Institutionen för freds- och konfliktforskning
Sammanfattning : This thesis draws on the climate-conflict research field to explore the question how does climate variability affect interstate conflict? This thesis contributes to various gaps in previous research by studying interstate conflict while most climate-conflict research investigates internal conflict, by using a new operationalization of climate variability as sea ice extent, and by studying an understudied case, the Arctic region. The theoretical argument consists of two parallel processes, a background mechanism focused on long-term climate change and a main mechanism focused on short-term climate variability. LÄS MER
- Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik
Sammanfattning : Direct Memory Access (DMA) is a feature of computer systems that allows hardware subsystems to access the main memory of the system independent of the Central Processing Unit (CPU). With the rise of big data transfers from/to different I/O devices, the use of DMA controllers has increased significantly. LÄS MER
- Master-uppsats, Lunds universitet/Institutionen för datavetenskap
Sammanfattning : Software models can simulate hardware components to varying degrees of ac- curacy. On the extreme ends, there are purely functional models which have no concept of time and execute requests right away, and cycle-accurate models which capture all the implementation details and clock the time they take. LÄS MER
4. Study of the Resistive Switching Mechanism in Novel Ultra-thin Organic-inorganic Dielectric-based RRAM through Electrical ObservationsMaster-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)
Sammanfattning : The promising role resistive random-access memory (RRAM) plays in the imminent reality of wearable electronics calls for a new, updated physical model of their operating mechanism. Their high applicability as the next-generation flexible non-volatile memory (NVM) devices has promoted the recent emergence of a novel ultra-thin (< 5nm) organic/inorganic hybrid dielectric RRAM. LÄS MER
- Master-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen
Sammanfattning : The purpose of this work is of evaluating the choice of HfO2 and ITO as the dielectric and the top electrode in high performance resistive random-access memory (RRAM), respectively. The study is twofold, as it quantiﬁes performance according to standard ﬁgures of merit for this technology, as well as provides insight into the physics of current conduction for this material choice. LÄS MER