Sökning: "transfer mobility"

Visar resultat 1 - 5 av 56 uppsatser innehållade orden transfer mobility.

  1. 1. Off-State Stress Effects in AlGaN/GaN HEMTs : Investigation of high-voltage off-state stress impact on performance of and its retention in hybrid-drain ohmic gate AlGaN/GaN HEMTs

    Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Författare :Ivan Krsic; [2023]
    Nyckelord :HEMT; GaN; off-state stress; memory effects; drain leakage current; dynamic RDSon; threshold voltage instabilities; charge redistribution; HEMT; GaN; stress i avslaget tillstånd; minneseffekter; läckströmmen; dynamisk RDSon; instabiliteten hos styrets tröskelspänning; omfördelningen av laddningar;

    Sammanfattning : High electron mobility transistors (HEMTs) realized using AlxGa1-xN/GaN are relatively new technology which is prominent for high-speed and high-power applications. Some of the main problems with this technology were identified as dynamic RDSon, current collapse and threshold voltage instabilities due to the off-state stress. LÄS MER

  3. 2. Digital Front End Algorithms for Sub-Band Full Duplex

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Midhat Rizvi; Khaled Al-Khateeb; [2023]
    Nyckelord :Adjacent Channel Leakage Ratio; Bit Error Rate; Clipping and Filtering; Crest Factor Reduction; Digital front end; Digital Pre-Distortion Error Vector Magnitude; Frequency Division Duplex; Power Amplifier; Peak to Average Power Ratio; Peak Cancellation Crest Factor Reduction; Sub Band Full Duplex; Self-Interference Cancellation; Signal-to-Interference Noise Ratio; Signal-to-Noise Ratio; Turbo Clipping; Time Division Duplex; Technology and Engineering;

    Sammanfattning : Sub-band full duplex is a new communication scheme technology, where a single frequency band is partitioned into sub-bands for downlink (DL) and up-link(UL) transmissions, and both can take place simultaneously. The idea behind the sub-band full duplex development is to improve the throughput, and coverage and reduce the latency of the UL communication by allowing the UL reception during the DL transmission. LÄS MER

  4. 3. EV - charger availability prediction based on machine learning

    Master-uppsats, Högskolan i Halmstad/Akademin för informationsteknologi

    Författare :Jainu Joseph; Jacob Sebastian; [2023]
    Nyckelord :;

    Sammanfattning : In response to the rapid growth of electric vehicles (EVs), our research focuses on the critical need for efficient management of charging infrastructure to facilitate the widespread adoption of EVs. Thisresearch leverages historical charging data as a foundation for predicting charging station availability. LÄS MER

  5. 4. Design and Simulation of a 10kW High-Efficiency Dual Active Bridge Converter

    Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Författare :Fan Yang; [2023]
    Nyckelord :Converter Design; Dual Active Bridge; Single Phase Shift Modulation; Extended Phase Shift Modulation; Efficiency Estimation; Konverterdesign; Dual Active Bridge; Single Fas Shift Modulation; Extended Phase Shift Modulation; Effektivitetsuppskattning;

    Sammanfattning : The EU has proposed an ambitious goal to achieve widespread E-mobility in both the electrical and commercial sectors. To accomplish this, a substantial number of DC fast-charging stations must be built. LÄS MER

  7. 5. Fabrication and Characterization of Quantum-well Field Effect Transistor

    Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Yang Fu; [2022]
    Nyckelord :quantum-well field-effect transistor; InGaAs; subthreshold swing; sheet resistance; contact resistance; electron mobility; Post Metallization Annealing; electrostatic control; Physics and Astronomy;

    Sammanfattning : The project aims to optimize the design and fabrication of InGaAs quantum-well field-effect transistor (QW-FET) by investigating transfer and output characteristics of the QW-FET. This work found a lower source/drain contact resistance solution starting with fabricating micrometer-level gate length transistors. LÄS MER