Sökning: "transistor"
Visar resultat 1 - 5 av 172 uppsatser innehållade ordet transistor.
1. Investigation and evaluation of optical distance sensors
Uppsats för yrkesexamina på grundnivå, Uppsala universitet/Signaler och systemSammanfattning : Optical sensors are among the sensors that are often used for distance measurements. An optical distance sensor is basically made of a light emitter (Tx) such as a light emitting diode (LED), a light receiver (Rx) such as a photosensitive transistor, and a circuit supporting the operation of the Tx and Rx. LÄS MER
2. Fabrication and Characterization of Quantum-well Field Effect Transistor
Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknikSammanfattning : The project aims to optimize the design and fabrication of InGaAs quantum-well field-effect transistor (QW-FET) by investigating transfer and output characteristics of the QW-FET. This work found a lower source/drain contact resistance solution starting with fabricating micrometer-level gate length transistors. LÄS MER
3. Fast Clock Synchronization for Large-Scale MEMS Ultrasonic Transducer Arrays
Master-uppsats, Linköpings universitet/Institutionen för systemteknikSammanfattning : In many systems today sensors or transmitters need to be read or controlled simultaneously. This thesis investigates a new architecture used for deskewing clock signals between multiple separated parts of a signal transmission system. LÄS MER
4. D-band Power Amplifiers in Vertical InGaAs Nanowire MOSFET Technology for 100 Gbps Wireless Communication
Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknikSammanfattning : Two different topologies of power amplifiers (PAs) are designed in the frequency range 130-174.8 GHz for use in backhaul transmitters. These are the pseudo-differential common source (PDCS) and the single-ended stacked amplifier topologies. LÄS MER
5. Analysis of condition for ALD deposition of ferroelectric HZO
Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknikSammanfattning : Deposition of ferroelectric hafnium zirconium oxide (HZO) on semiconductor samples with Atomic Layer Deposition (ALD) has proven to be a viable method of production. But while the physical processes of ALD deposition is relatively well know, there exists some gaps in knowledge about different parameters for the ALD and the resulting depositions. LÄS MER
