Sökning: "transistor"
Visar resultat 21 - 25 av 196 uppsatser innehållade ordet transistor.
21. E-Band SPDT RF Switch for a Class F PA in III-V Nanowire MOSFET Technology
Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknikSammanfattning : This project designs an RF switch operating in E-band to provide a transmit path from a Class-F power amplifier (PA). The basic RF switch is based on the single-pole double-throw (SPDT) topology using shunt transistor switches and two λ/4 transmission line. LÄS MER
22. Investigating the use of Semiconductor Nanowires for Neural Networks
Master-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionenSammanfattning : In this work, we intend to employ nanowires for the realisation of an artificial neuron which can be used to design a neural network that will guide the new generation of non-von Neumann architectures such as Neuromorphic Computing. Possible applications are strongly related to Neuromorphic architectures and artificial intelligence, such as high-performance computers, robotics hardware and autonomous drones. LÄS MER
23. Characterisation of GaN HEMTs on Different Substrates for Power Electronics Applications
Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)Sammanfattning : GaN-based High Electron Mobility Transistors (HEMT) are appealing because of their large breakdown field, high saturation velocity, and superior thermal conductivity. They work at high temperature without much degradation. HEMTs have a few drawbacks despite many positives. The cost of developing GaN HEMTs on a native substrate is high. LÄS MER
24. D-band Power Amplifiers in Vertical InGaAs Nanowire MOSFET Technology for 100 Gbps Wireless Communication
Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknikSammanfattning : Two different topologies of power amplifiers (PAs) are designed in the frequency range 130-174.8 GHz for use in backhaul transmitters. These are the pseudo-differential common source (PDCS) and the single-ended stacked amplifier topologies. LÄS MER
25. Analysis of condition for ALD deposition of ferroelectric HZO
Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknikSammanfattning : Deposition of ferroelectric hafnium zirconium oxide (HZO) on semiconductor samples with Atomic Layer Deposition (ALD) has proven to be a viable method of production. But while the physical processes of ALD deposition is relatively well know, there exists some gaps in knowledge about different parameters for the ALD and the resulting depositions. LÄS MER