Evaluation of Si-LDMOS transistors for RF Power Amplifier in 2-6 GHz frequency range

Sammanfattning: In this thesis the models of Si-LDMOS transistors have been investigated with Agilent EEsof ADS version 2002a for operation in the 2-6 GHz frequency range. The first one is the Motorola’s (MRF21010) model based on a 30 mm prototype of a Si-LDMOS transistor. The second one is a model based on a 1 mm prototype of Si-LDMOS transistor developed at Chalmers University. Large-signal simulations of Chalmers’ model have demonstrated results, which lead to the conclusion that,this model cannot be efficiently utilised for design for a PA in the 2-6 GHz frequency range. However, additional simulations with reduced Rd (drain losses) show the deep impact of this parameter on the main properties of the designed PA. Hence, it is important to take it into account during new processes of Si-LDMOS as well as to improve the CAD model. The final conclusion regarding Si-LDMOS cannot be made just based on these simulation results, since they are not in accordance with the published ones. The next step should be aimed at improving the model and further investigation of Si-LDMOS to prove their ability to operate in the 2-6 GHz frequency range.