Sökning: "MOVPE"

Visar resultat 1 - 5 av 16 uppsatser innehållade ordet MOVPE.

  1. 1. Development of thick GaN and AlGaN drift layers for vertical power devices

    Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Författare :Andri Dhora; [2023]
    Nyckelord :Technology and Engineering;

    Sammanfattning : High-quality, thick III-nitride epitaxial drift layers with controlled doping are needed for next-generation highly efficient vertical power devices for a smart grid applications and electrification of mobility. Achieving desirable material properties, such as low background impurity concentrations and reduced dislocation densities in combination with high growth rates, necessary for practical application present a challenge. LÄS MER

  3. 2. BCP Lithography Defined Arrays of InAs NWs Grown Using MOVPE with Au Seeds

    Master-uppsats, Lunds universitet/Lunds Tekniska Högskola; Lunds universitet/Fasta tillståndets fysik

    Författare :Björn Landeke-Wilsmark; [2022]
    Nyckelord :Physics and Astronomy;

    Sammanfattning : In this report we outline a detailed process flow for a quick and inexpensive implementation of large dense arrays of InAs nanowires (NWs) grown in the reactive ion etching/etched (RIE) pores of a SiO2/SiNx mask on top of an InAs/Si(111) substrate. The self-assembled (hexagonally close-packed) pattern of poly(methyl-methacrylate) (PMMA) cylinders in a poly(styrene) (PS) matrix adopted by a linear diblock poly(styrene-block-methyl-methacrylate) P(S-b-MMA) block-copolymer (BCP) was transferred to the dielectric stack (consisting of a ≈10 nm plasma enhanced chemical vapour deposition/deposited (PECVD) SiNX layer topped by a thin atomic layer deposition/deposited (ALD) SiO2 film) using a two-step RIE procedure. LÄS MER

  4. 3. AlP sacrificial layer for GaP NW growth

    Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Författare :Patrick Flatt; [2020]
    Nyckelord :Nanowire; Substrate Reuse; Sacrificial Layer; Epitaxy; Wafer; MOVPE; Etching; GaP; AlP; SiN; Au; SEM; Physics and Astronomy;

    Sammanfattning : III-V semiconductor nanowires (NWs) display outstanding potential for many technological applications, but their implementation into devices is restricted due to high material and fabrication costs. Common techniques for NW synthesis rely on single crystalline substrates, which are single-use and have large costs associated to them. LÄS MER

  5. 4. Optimization of MOVPE-grown Quantum Dots for long distance quantum communication

    Master-uppsats, KTH/Tillämpad fysik

    Författare :Carlos Nuñez Lobato; [2019]
    Nyckelord :;

    Sammanfattning : .... LÄS MER

  7. 5. Growth of InAsSb and GaAsSb Nanowires

    Master-uppsats, Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Författare :Robin Sjökvist; [2018]
    Nyckelord :Nanowire; Crystal Growth; Growth; MOVPE; TEM; SEM; Semiconductor; Materials Science; Physics; Technology and Engineering;

    Sammanfattning : Att kunna ändra egenskaperna hos nanotrådar till specifika applikationer är viktigt om nanotrådar ska kunna inkorporeras i elektronikindustrin. Bandgapet är en sådan egenskap som för ternära III-V halvledare kan ändras om "ordning" uppstår i materialet. LÄS MER