Sökning: "III-V semiconductor"

Visar resultat 1 - 5 av 40 uppsatser innehållade orden III-V semiconductor.

  1. 1. In-Situ Investigation of Particle Assisted GaSb Nucleation Using Environmental TEM

    Master-uppsats, Lunds universitet/Centrum för analys och syntes

    Författare :Aidas Urbonavicius; [2023]
    Nyckelord :ETEM; Nucleation; GaSb; Nanowires; Materials chemistry; Technology and Engineering; Chemistry;

    Sammanfattning : III-V semiconductor material based nanowires have been extensively studied and shown to be a very exciting building block for future electronics. Material systems such as GaSb show a lot of promise in optoelectric and thermoelectric generation applications because of its high electron mobility and small bandgap. LÄS MER

  3. 2. Fabrication and characterization of GaAsxP1-x single junction solar cell on Si for III-V/Si tandem solar cell

    Master-uppsats, KTH/Tillämpad fysik

    Författare :Elaheh Aghajafari; [2023]
    Nyckelord :III-V semiconductor; GaAsxP1-x heteroeputaxy; hydride vapor phase epitaxy; III-V Si solar cell; III-V halvledare; GaAsxP1-x epitaxiallager; hydridångfasepitaxi; III-V Si solcell;

    Sammanfattning : Silicon based solar cells have been used as photovoltaic devices for decades due to reasonable cost and environment- friendly nature of silicon. But the conversion efficiency of silicon solar cell is limited; for instance, the maximum conversion efficiency of a crystalline silicon solar cell available in the market developed by Kaneka Corporation is 26 % [1]. LÄS MER

  4. 3. Modulation of the optical properties of quantum dots by surface acoustic waves

    Master-uppsats, KTH/Tillämpad fysik

    Författare :Tanguy Schetelat; [2023]
    Nyckelord :Nanophotonics; Quantum dots; Surface acoustic waves; Interdigital tansducers; Optomechanical coupling; Nanofotonik; Kvantprickar; Akustika yt-vågor; Interdigital tansducers; Optomekanisk koppling;

    Sammanfattning : Semiconductor quantum dots (QDs) are considered to be a crucial part of future quantum technologies due to their enormous potential as efficient sources of single and indistinguishable photons. Single photons are necessary to transport quantum information over large distances through the existing global fibre optic network. LÄS MER

  5. 4. Flashlamp Annealing for Improved Ferroelectric Junctions

    Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Theodor Blom; [2023]
    Nyckelord :Flashlamp annealing; ferroelectricity; hafnia oxide; III-V semiconductor; thermal annealing; device performance; Technology and Engineering;

    Sammanfattning : The effects of flashlamp annealing (FLA) on the quality of ferroelectric HfxZr1–xO2 (HZO) interfaces, integrated on InAs substrates, are evaluated. For the integration of ferroelectric HZO on III-V semiconductors the crystallization via rapid thermal processing (RTP) can severely degrade the HZO/III-V interface. LÄS MER

  7. 5. Characterization of Bi-incorporated InSb(111)A/B Surfaces : An STM and XPS Study

    Master-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Författare :Shengpeng Huang; [2023]
    Nyckelord :indium antimonide; surface reconstructions; bismuth deposition; scanning tunneling microscopy; X-ray photoelectron spectroscopy.; Physics and Astronomy;

    Sammanfattning : In recent years, III-V semiconductor materials have received increasing attention due to their admirable electronic properties like direct tunable bandgaps and high charge carrier mobility. Indium Antimonide (InSb) possesses the largest electron mobility among III-V materials and is promising for infrared detectors, high-speed field effect transistors, and spintronics. LÄS MER