Sökning: "Orthorhombic"

Visar resultat 1 - 5 av 8 uppsatser innehållade ordet Orthorhombic.

  1. 1. Structural analysis of HZO thin film and electrode using X-ray diffraction

    Kandidat-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Författare :Elliot Winsnes; [2024]
    Nyckelord :HZO; hafnia; hafnium dioxide; zirconium dioxide; ferroelectricity; ferroelectric; synchrotron radiation; X-ray diffraction; Physics and Astronomy;

    Sammanfattning : Since its discovery in 2011, the ferroelectricity of thin films based on HfO2 has been studied intensively. In particular, thin films with a 1:1 ratio of HfO2 and ZrO2 (HZO) has been of great interest. The ferroelectricity arises from a non-centrosymmetric orthorhombic (o) phase of HZO whose prevalence is dependent on the processing conditions. LÄS MER

  3. 2. Inkjet printed piezoelectric energy harvesters based on self-assembly of diphenylalanine peptide

    Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Författare :Yujie Fu; [2023]
    Nyckelord :Inkjet printing; piezoelectric energy harvester; diphenylalanine peptide; self-assembly; Bläckstråleutskrift; piezoelektrisk energiskördare; difenylalaninpeptid; självmontering;

    Sammanfattning : Diphenylalanine peptide (Phe-Phe or FF) is a very promising bio-material in the future wearable electronics application due to its self-assembly into nanotubes and nanoribbons with high shear piezoelectric coefficient which is comparable to traditional inorganic piezoelectric materials. In order to efficiently harvest piezoelectric response, alignment and unidirectional polarization of FF nanotubes are required. LÄS MER

  4. 3. Theoretical investigation of α-iron chromium carbide (α-Fe/Cr7C3) interfaces

    Master-uppsats, Malmö universitet/Institutionen för materialvetenskap och tillämpad matematik (MTM)

    Författare :Hussein Al-Hussein; [2023]
    Nyckelord :Alpha-iron; Chromium carbide; Cr7C3; Fe; Theoretical investigation; Orthorhombic; X-ray diffraction pattern; XRD; VASP; VESTA; Body-centered-cubic; Ferrite; Density functional theory; DFT; Surface relaxation; Simulation; Calculation; Energy relaxation; Slab models; Coherency; Surface energy; Interfacial energy; Alfa-järn; Kromkarbid; Cr7C3; Fe; Teoretisk undersökning; Ortorombisk; Röntgendiffraktion; XRD; VASP; VESTA; Ytenergi; Koherent; Simulering; Beräkning; Järnkarbid; DFT; Täthetsfunktionalanalys;

    Sammanfattning : This master thesis presents a theoretical investigation of the energy and stability of interfaces in iron-carbide compounds, specifically focusing on the α-Fe/Cr7C3 system. The study aims to fill the gap in knowledge regarding the surface energetics of these interfaces using Density Functional Theory (DFT). LÄS MER

  5. 4. In situ X-ray diffraction studies of vertically aligned CsPbBr3 nanowire arrays

    Kandidat-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Författare :Jesper Larsson; [2022]
    Nyckelord :Physics and Astronomy;

    Sammanfattning : The past decade has seen a great interest in the development of metal halide perovskite materials for use in photo-optical devices, due to the excellent photo-optical properties of these materials. The primary limitation to industrial adoption, and the subject of much research, is the susceptibility of these materials to degradation from exposure to various factors such as air, heat and moisture. LÄS MER

  7. 5. Laminated HZO on InAs: A study of as-deposited ferroelectricity

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :André Andersen; [2022]
    Nyckelord :Ferroelectricity; HZO; InAs; III V; As-deposited ferroelectricity; BEOL; Nanoelectronics; Nanoprocessing; Nanotechnology; ALD; MOSCAP; Memory Technology; Technology and Engineering;

    Sammanfattning : As the limits of transistor feature size scaling is reaching its saturation, new innovations are needed to prevent performance loss. High performance transistors on the III/V semiconductor platform implemented with ferroelectric oxides might in the future satisfy this demand. LÄS MER