Sökning: "HZO"

Visar resultat 1 - 5 av 7 uppsatser innehållade ordet HZO.

  1. 1. Structural analysis of HZO thin film and electrode using X-ray diffraction

    Kandidat-uppsats, Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Författare :Elliot Winsnes; [2024]
    Nyckelord :HZO; hafnia; hafnium dioxide; zirconium dioxide; ferroelectricity; ferroelectric; synchrotron radiation; X-ray diffraction; Physics and Astronomy;

    Sammanfattning : Since its discovery in 2011, the ferroelectricity of thin films based on HfO2 has been studied intensively. In particular, thin films with a 1:1 ratio of HfO2 and ZrO2 (HZO) has been of great interest. The ferroelectricity arises from a non-centrosymmetric orthorhombic (o) phase of HZO whose prevalence is dependent on the processing conditions. LÄS MER

  3. 2. Ru and RuO2 as bottom electrodes for HZO based FTJ’s

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Emil Gränsmark; [2023]
    Nyckelord :Technology and Engineering;

    Sammanfattning : Vår hjärna löser beräkningar som tar oss genom livet otroligt energieffektivt; den kör hela dagen runt på ungefär 12 watt. Jämför man med en vanlig dator som kräver ungefär 175 watt så är det inte ens nära[2]. Att uppnå hjärnans energieffektivitet är ett ambitiöst mål för dagens elektronik. LÄS MER

  4. 3. Flashlamp Annealing for Improved Ferroelectric Junctions

    Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Theodor Blom; [2023]
    Nyckelord :Flashlamp annealing; ferroelectricity; hafnia oxide; III-V semiconductor; thermal annealing; device performance; Technology and Engineering;

    Sammanfattning : The effects of flashlamp annealing (FLA) on the quality of ferroelectric HfxZr1–xO2 (HZO) interfaces, integrated on InAs substrates, are evaluated. For the integration of ferroelectric HZO on III-V semiconductors the crystallization via rapid thermal processing (RTP) can severely degrade the HZO/III-V interface. LÄS MER

  5. 4. Semiconducting TiO2 for High Performance Ferroelectric Tunnel Junctions

    M1-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Erik Wikare; [2022]
    Nyckelord :Technology and Engineering;

    Sammanfattning : The ferroelectric tunnel junction FTJ is a rather old concept but has recently been in the spotlight for its promising properties in computer memory technology and neuromorphic computing. The device consists of a ferroelectric insulator sandwiched between two electrodes, and by polarisation switching the resistance along the heterostructure can drastically be adjusted. LÄS MER

  7. 5. Laminated HZO on InAs: A study of as-deposited ferroelectricity

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :André Andersen; [2022]
    Nyckelord :Ferroelectricity; HZO; InAs; III V; As-deposited ferroelectricity; BEOL; Nanoelectronics; Nanoprocessing; Nanotechnology; ALD; MOSCAP; Memory Technology; Technology and Engineering;

    Sammanfattning : As the limits of transistor feature size scaling is reaching its saturation, new innovations are needed to prevent performance loss. High performance transistors on the III/V semiconductor platform implemented with ferroelectric oxides might in the future satisfy this demand. LÄS MER