Sökning: "Field Effect-transistor"

Visar resultat 1 - 5 av 25 uppsatser innehållade orden Field Effect-transistor.

  1. 1. Measuring bacterial metabolism and antibioticsusceptibility : using silicon nanowire field-effect transistor.

    Uppsats för yrkesexamina på avancerad nivå, Uppsala universitet/Fasta tillståndets elektronik

    Författare :George Alhoush; [2024]
    Nyckelord :Silicon nanowire field effective transistor; SiNWFET; Ion-selective filed effect transistor; ISFET; Antibiotic susceptibility test; AST; Measuring bacterial metabolism using microchip;

    Sammanfattning : Antimicrobial resistance is considered by many prominent researcher and scientist as a profound global health crisis that us humans must face in the next decade. It is threatening the effectiveness of these once-reliable weapons against bacterial infections and leaving us susceptible to pathogenic agents. LÄS MER

  3. 2. Flashlamp Annealing for Improved Ferroelectric Junctions

    Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Theodor Blom; [2023]
    Nyckelord :Flashlamp annealing; ferroelectricity; hafnia oxide; III-V semiconductor; thermal annealing; device performance; Technology and Engineering;

    Sammanfattning : The effects of flashlamp annealing (FLA) on the quality of ferroelectric HfxZr1–xO2 (HZO) interfaces, integrated on InAs substrates, are evaluated. For the integration of ferroelectric HZO on III-V semiconductors the crystallization via rapid thermal processing (RTP) can severely degrade the HZO/III-V interface. LÄS MER

  4. 3. Investigation of switching power losses of SiC MOSFET : used in a DC/DC Buck converter

    Master-uppsats, KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Författare :André Xavier Svensson; [2022]
    Nyckelord :Switching power losses; Metal Oxide Semiconductor Field Effect Transistor; Silicon carbide; Synchronous Buck converter; Wide Band Gap; Double Pulse Test; Efficiency; Temperature; Växlande effektförluster; Fälteffekttransistor; Kiselkarbid; Synchronous Buck omvandlare; Wide Band Gap; Double Pulse Test; Verkningsgrad; Temperatur;

    Sammanfattning : All DC/DC converter products include power electronic circuits for power conversion.It is important to find an efficient way for power conversion to reduce power losses and reduce the need for cooling and achieve environmentally friendly solutions.The use of semiconductor switches of wide band gap type is a solution to the problem. LÄS MER

  5. 4. Fabrication and Characterization of Quantum-well Field Effect Transistor

    Master-uppsats, Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Yang Fu; [2022]
    Nyckelord :quantum-well field-effect transistor; InGaAs; subthreshold swing; sheet resistance; contact resistance; electron mobility; Post Metallization Annealing; electrostatic control; Physics and Astronomy;

    Sammanfattning : The project aims to optimize the design and fabrication of InGaAs quantum-well field-effect transistor (QW-FET) by investigating transfer and output characteristics of the QW-FET. This work found a lower source/drain contact resistance solution starting with fabricating micrometer-level gate length transistors. LÄS MER

  7. 5. Temperature Dependent Electrical Characterisation of Vertical InAs-InGaAs Nanowire MOSFETs

    Master-uppsats, Lunds universitet/Institutionen för elektro- och informationsteknik

    Författare :Sofie Johannesson; Sebastian Skog; [2022]
    Nyckelord :Vertical InGaAs Nanowire MOSFET Temperature Dependence Noise; Technology and Engineering;

    Sammanfattning : This thesis presents the temperature dependence of InGaAs Nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) grown at two different temperatures. The two different growths represent one sample having nanowires which have a mixed crystal structure (showing stacking faults) and one sample with nanowires of pure crystal structure (without stacking faults). LÄS MER